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  1. 1994

  2. Spin‐polarised tunnelling current in metal–insulator–gapless semiconductor structures in a magnetic field

    Germanenko, A. V., Kruzhaev, V. V., Minkov, G. M., Rumyantsev, E. L. & Rut, O. E., 1 Jan 1994, In: Advanced Functional Materials. 3, 1-6, p. 127-130 4 p.

    Research output: Contribution to journal › Article › peer-review

  3. 1993

  4. Spin-dependent tunnelling in metal-insulator-gapless semiconductor structures in a magnetic field

    Germanenko, A. V., Kruzhaev, V. V., Minkov, G. M., Rumyantsev, E. L. & Rut, O. E., Mar 1993, In: Semiconductor Science and Technology. 8, 3, p. 383-387 5 p.

    Research output: Contribution to journal › Article › peer-review

  5. 1988

  6. PROBLEM OF GALVANOMAGNETIC EFFECTS IN LIGHTLY DOPED P-TYPE ZERO-GAP SEMICONDUCTOR HG1-XCDXTE

    Germanenko, A. V., Kruzhaev, V. V., Minkov, G. M. & Rut, O. E., Jun 1988, In: Soviet physics. Semiconductors. 22, 6, p. 626-629 4 p.

    Research output: Contribution to journal › Article › peer-review

  7. 1987

  8. CLASSICAL LOW-TEMPERATURE BEHAVIOR OF TRANSPORT-COEFFICIENTS OF PARA-TYPE HG0.8CD0.2TE

    Elizarov, A. I., Kruzhaev, V. V., Minkov, G. M., Nikitin, M. S. & Rut, O. E., Mar 1987, In: Soviet physics. Semiconductors. 21, 3, p. 292-294 3 p.

    Research output: Contribution to journal › Article › peer-review

  9. 1986

  10. INFLUENCE OF THE EXCHANGE INTERACTION ON GALVANOMAGNETIC EFFECTS IN HEAVILY DOPED P-TYPE HG1-XMNX TE WITH EPSILON-G GREATER-THAN 0

    Germanenko, A. V., Kruzhaev, V. V., Minkov, G. M. & Rut, O. E., Sept 1986, In: Soviet physics. Semiconductors. 20, 9, p. 1041-1044 4 p.

    Research output: Contribution to journal › Article › peer-review

  11. INFLUENCE OF QUANTIZATION OF THE VALENCE BAND SPECTRUM ON THE MAGNETORESISTANCE OF P-TYPE HG1-XMNXTE AT LOW-TEMPERATURES

    Germanenko, A. V., Kruzhaev, V. V., Minkov, G. M. & Rut, O. E., Jul 1986, In: Soviet physics. Semiconductors. 20, 7, p. 838-839 2 p.

    Research output: Contribution to journal › Comment/debate › peer-review

  12. CHARACTERISTICS OF GALVANOMAGNETIC EFFECTS AND FREEZEOUT AT ACCEPTORS IN ZERO-GAP P-TYPE Hg//1// minus //xMn//xTe SUBJECTED TO A MAGNETIC FIELD AT LOW TEMPERATURES

    Germanenko, A. V., Zverev, L. P., Kruzhaev, V. V., Min'kov, G. M. & Rut, O. E., 1 Jan 1986, In: Soviet physics. Semiconductors. 20, 1, p. 46-52 7 p.

    Research output: Contribution to journal › Article › peer-review

  13. CHARACTERISTICS OF GALVANOMAGNETIC EFFECTS AND FREEZEOUT AT ACCEPTORS IN ZERO-GAP P-TYPE HG1-XMNXTE SUBJECTED TO A MAGNETIC-FIELD AT LOW-TEMPERATURES

    Germanenko, A. V., Zverev, L. P., Kruzhaev, V. V., Minkov, G. M. & Rut, O. E., Jan 1986, In: Soviet physics. Semiconductors. 20, 1, p. 46-52 7 p.

    Research output: Contribution to journal › Article › peer-review

  14. NEGATIVE MAGNETORESISTANCE OF HEAVILY DOPED COMPENSATED P-TYPE HG1-XMNXTE

    Germanenko, A. V., Kruzhaev, V. V. & Minkov, G. M., Jan 1986, In: Soviet physics. Semiconductors. 20, 1, p. 85-86 2 p.

    Research output: Contribution to journal › Comment/debate › peer-review

  15. 1985

  16. COUPLED MAGNETIC POLARON IN GAPLESS P-HG1-XMNXTE

    Germanenko, A. V., Zverev, L. P., Kruzhaev, V. V., Minkov, G. M. & Rut, O. E., 1985, In: Физика твердого тела. 27, 6, p. 1857-1863 7 p.

    Research output: Contribution to journal › Article › peer-review

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ID: 56894