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CHARACTERISTICS OF GALVANOMAGNETIC EFFECTS AND FREEZEOUT AT ACCEPTORS IN ZERO-GAP P-TYPE HG1-XMNXTE SUBJECTED TO A MAGNETIC-FIELD AT LOW-TEMPERATURES
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Contribution to journal
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Article
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peer-review
Section of Optoelectronics and Semiconductor Technology
Institute of Natural Sciences and Mathematics
Overview
Cite this
A. V. Germanenko
L. P. Zverev
V. V. Kruzhaev
G. M. Minkov
O. E. Rut
Original language
English
Pages (from-to)
46-52
Number of pages
7
Journal
Soviet physics. Semiconductors
Volume
20
Issue number
1
Publication status
Published -
Jan 1986
WoS ResearchAreas Categories
Physics, Condensed Matter
ID: 7214389