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Владимир Венедиктович Кружаев
Kruzhaev, V. V.
Deputy of Head
Rectorate
- Deputy of Head
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1976
SWITCHING TIME IN LOW-TEMPERATURE IMPURITY BREAKDOWN IN n-TYPE GaAs
Zverev, L. P.
,
Min'kov, G. M.
,
Negashev, S. A.
&
Kruzhaev, V. V.
,
1 Jan 1976
,
In:
Semiconductors.
10
,
6
,
p. 716-717
2 p.
Research output
:
Contribution to journal
›
Article
›
peer-review
1975
OPTICAL HEATING OF ELECTRONS IN GaAs
Zverev, L. P.
,
Min'kov, G. M.
,
Kruzhaev, V. V.
&
Negashev, S. A.
,
1 Jan 1975
,
In:
Semiconductors.
9
,
11
,
p. 1420-1421
2 p.
Research output
:
Contribution to journal
›
Article
›
peer-review
1974
MECHANISM OF RADIATIVE RECOMBINATION IN STRONGLY DOPED P-GAAS
Zverev, L. P.
,
Kruzhaev, V. V.
&
Negashev, S. A.
,
1974
,
In:
JETP Letters.
20
,
1
,
p. 22-24
3 p.
Research output
:
Contribution to journal
›
Article
›
peer-review
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ID: 56894