Spin-dependent tunnelling in metal-insulator-gapless semiconductor structures in a magnetic field › Research Explorer

Spin-dependent tunnelling in metal-insulator-gapless semiconductor structures in a magnetic field

Research output: Contribution to journal › Article › peer-review

DOI

https://doi.org/10.1088/0268-1242/8/3/013
Final published version

Original language	English
Pages (from-to)	383-387
Number of pages	5
Journal	Semiconductor Science and Technology
Volume	8
Issue number	3
DOIs	https://doi.org/10.1088/0268-1242/8/3/013
Publication status	Published - Mar 1993

ASJC Scopus subject areas

Materials Chemistry
Electrical and Electronic Engineering

WoS ResearchAreas Categories

Engineering, Electrical & Electronic
Materials Science, Multidisciplinary
Physics, Condensed Matter

ID: 7213886