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  1. 1981

  2. TWO-DIMENSIONAL SURFACE ELECTRONS IN HGSE

    Minkov, G. M., Rut, O. E. & Kruzhaev, V. V., 1981, In: Физика твердого тела. 23, 9, p. 2574-2576 3 p.

    Research output: Contribution to journal › Article › peer-review

  3. 1980

  4. OSCILLATIONS OF THE TUNNELING CONDUCTIVITY OF A N-TYPE InAs-OXIDE-Pb JUNCTION IN A QUANTIZING MAGNETIC FIELD.

    Min'kov, G. M. & Kruzhaev, V. V., 1 Jan 1980, In: Soviet Physics, Solid State (English translation of Fizika Tverdogo Tela). 22, 6, p. 959-963 5 p.

    Research output: Contribution to journal › Article › peer-review

  5. POSSIBLE USE OF TUNNEL SPECTROSCOPY FOR DETERMINING THE ENERGY-DEPENDENCE OF THE EFFECTIVE MASS IN SEMICONDUCTORS

    Zverev, L. P., Kruzhaev, V. V., Minkov, G. M. & Rut, O. E., 1980, In: JETP Letters. 31, 3, p. 154-157 4 p.

    Research output: Contribution to journal › Article › peer-review

  6. TUNNELING CONDUCTIVITY OSCILLATIONS OF N-INAS-OXIDE-PB JUNCTION IN QUANTIZING MAGNETIC-FIELD

    Minkov, G. M. & Kruzhaev, V. V., 1980, In: Физика твердого тела. 22, 6, p. 1641-1648 8 p.

    Research output: Contribution to journal › Article › peer-review

  7. 1979

  8. APPLICATION OF TUNNEL SPECTROSCOPY IN A MAGNETIC-FIELD TO THE INVESTIGATION OF THE DISPERSION LAW OF A HEAVILY-DOPED N-INAS

    Zverev, L. P., Minkov, G. M. & Kruzhaev, VV., 1979, In: JETP Letters. 29, 7, p. 365-369 5 p.

    Research output: Contribution to journal › Article › peer-review

  9. 1977

  10. MECHANISM OF BAND GAP VARIATION IN HEAVILY DOPED GALLIUM ARSENIDE.

    Zverev, L. P., Negashev, S. A., Kruzhaev, V. V. & Min'kov, G. M., 1 Jan 1977, In: Semiconductors. 11, 6, p. 603-605 3 p.

    Research output: Contribution to journal › Article › peer-review

  11. 1976

  12. DIRECT DETERMINATION OF FORBIDDEN-BAND WIDTH OF A HEAVILY DOPED SEMICONDUCTOR.

    Zverev, L. P., Kruzhaev, V. V., Negashev, S. A. & Min'kov, G. M., 1 Jan 1976, In: Semiconductors. 10, 3, p. 337-338 2 p.

    Research output: Contribution to journal › Article › peer-review

  13. MECHANISM OF ENERGY RELAXATION IN GaAs AT LOW TEMPERATURES.

    Zverev, L. P., Min'kov, G. M., Negashev, S. A. & Kruzhaev, V. V., 1 Jan 1976, In: Semiconductors. 10, 12, p. 1388-1390 3 p.

    Research output: Contribution to journal › Article › peer-review

  14. METHOD FOR DETERMINATION OF THE CONDUCTION MECHANISM IN SEMICONDUCTORS.

    Zverev, L. P., Min'kov, G. M., Kruzhaev, V. V. & Negashev, S. A., 1 Jan 1976, In: Semiconductors. 10, 4

    Research output: Contribution to journal › Article › peer-review

  15. PHOTOLUMINESCENCE EMITTED FROM p-TYPE GaAs DIFFUSION-DOPED WITH ZINC AND SUBJECTED TO A MAGNETIC FIELD.

    Zverev, L. P., Negashev, S. A. & Kruzhaev, V. V., 1 Jan 1976, In: Semiconductors. 10, 6, p. 609-612 4 p.

    Research output: Contribution to journal › Article › peer-review

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