PROBLEM OF GALVANOMAGNETIC EFFECTS IN LIGHTLY DOPED P-TYPE ZERO-GAP SEMICONDUCTOR HG1-XCDXTE

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	626-629
Number of pages	4
Journal	Soviet physics. Semiconductors
Volume	22
Issue number	6
Publication status	Published - Jun 1988

ID: 7213966