SWITCHING TIME IN LOW-TEMPERATURE IMPURITY BREAKDOWN IN n-TYPE GaAs › Research Explorer

SWITCHING TIME IN LOW-TEMPERATURE IMPURITY BREAKDOWN IN n-TYPE GaAs

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	716-717
Number of pages	2
Journal	Semiconductors
Volume	10
Issue number	6
Publication status	Published - 1 Jan 1976

ASJC Scopus subject areas

Engineering(all)

WoS ResearchAreas Categories

Physics, Condensed Matter

ID: 7211866