MECHANISM OF BAND GAP VARIATION IN HEAVILY DOPED GALLIUM ARSENIDE. › Research Explorer

MECHANISM OF BAND GAP VARIATION IN HEAVILY DOPED GALLIUM ARSENIDE.

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	603-605
Number of pages	3
Journal	Semiconductors
Volume	11
Issue number	6
Publication status	Published - 1 Jan 1977

ASJC Scopus subject areas

Engineering(all)

WoS ResearchAreas Categories

Physics, Condensed Matter

ID: 7211541