PHOTOLUMINESCENCE EMITTED FROM p-TYPE GaAs DIFFUSION-DOPED WITH ZINC AND SUBJECTED TO A MAGNETIC FIELD. › Research Explorer

PHOTOLUMINESCENCE EMITTED FROM p-TYPE GaAs DIFFUSION-DOPED WITH ZINC AND SUBJECTED TO A MAGNETIC FIELD.

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	609-612
Number of pages	4
Journal	Semiconductors
Volume	10
Issue number	6
Publication status	Published - 1 Jan 1976

WoS ResearchAreas Categories

Physics, Condensed Matter

ASJC Scopus subject areas

Engineering(all)

ID: 7211975