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PROBLEM OF GALVANOMAGNETIC EFFECTS IN LIGHTLY DOPED P-TYPE ZERO-GAP SEMICONDUCTOR HG1-XCDXTE. / Germanenko, A. V.; Kruzhaev, V. V.; Minkov, G. M. et al.
In: Soviet physics. Semiconductors, Vol. 22, No. 6, 06.1988, p. 626-629.

Research output: Contribution to journal › Article › peer-review

Harvard

Germanenko, AV, Kruzhaev, VV, Minkov, GM & Rut, OE 1988, 'PROBLEM OF GALVANOMAGNETIC EFFECTS IN LIGHTLY DOPED P-TYPE ZERO-GAP SEMICONDUCTOR HG1-XCDXTE', Soviet physics. Semiconductors, vol. 22, no. 6, pp. 626-629.

APA

Germanenko, A. V., Kruzhaev, V. V., Minkov, G. M., & Rut, O. E. (1988). PROBLEM OF GALVANOMAGNETIC EFFECTS IN LIGHTLY DOPED P-TYPE ZERO-GAP SEMICONDUCTOR HG1-XCDXTE. Soviet physics. Semiconductors, 22(6), 626-629.

Vancouver

Germanenko AV, Kruzhaev VV, Minkov GM, Rut OE. PROBLEM OF GALVANOMAGNETIC EFFECTS IN LIGHTLY DOPED P-TYPE ZERO-GAP SEMICONDUCTOR HG1-XCDXTE. Soviet physics. Semiconductors. 1988 Jun;22(6):626-629.

Author

Germanenko, A. V. ; Kruzhaev, V. V. ; Minkov, G. M. et al. / PROBLEM OF GALVANOMAGNETIC EFFECTS IN LIGHTLY DOPED P-TYPE ZERO-GAP SEMICONDUCTOR HG1-XCDXTE. In: Soviet physics. Semiconductors. 1988 ; Vol. 22, No. 6. pp. 626-629.

BibTeX

@article{fdb9eb4133b040d289f6254878e502b2,
title = "PROBLEM OF GALVANOMAGNETIC EFFECTS IN LIGHTLY DOPED P-TYPE ZERO-GAP SEMICONDUCTOR HG1-XCDXTE",
author = "Germanenko, {A. V.} and Kruzhaev, {V. V.} and Minkov, {G. M.} and Rut, {O. E.}",
year = "1988",
month = jun,
language = "English",
volume = "22",
pages = "626--629",
journal = "Soviet physics. Semiconductors",
issn = "0038-5700",
publisher = "American Institute of Physics Publising LLC",
number = "6",

}

RIS

TY - JOUR

T1 - PROBLEM OF GALVANOMAGNETIC EFFECTS IN LIGHTLY DOPED P-TYPE ZERO-GAP SEMICONDUCTOR HG1-XCDXTE

AU - Germanenko, A. V.

AU - Kruzhaev, V. V.

AU - Minkov, G. M.

AU - Rut, O. E.

PY - 1988/6

Y1 - 1988/6

UR - https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=tsmetrics&SrcApp=tsm_test&DestApp=WOS_CPL&DestLinkType=FullRecord&KeyUT=A1988R060600002

M3 - Article

VL - 22

SP - 626

EP - 629

JO - Soviet physics. Semiconductors

JF - Soviet physics. Semiconductors

SN - 0038-5700

IS - 6

ER -

ID: 7213966