Standard

PHOTOLUMINESCENCE EMITTED FROM p-TYPE GaAs DIFFUSION-DOPED WITH ZINC AND SUBJECTED TO A MAGNETIC FIELD. / Zverev, L. P.; Negashev, S. A.; Kruzhaev, V. V.
In: Semiconductors, Vol. 10, No. 6, 01.01.1976, p. 609-612.

Research output: Contribution to journal › Article › peer-review

Harvard

Zverev, LP, Negashev, SA & Kruzhaev, VV 1976, 'PHOTOLUMINESCENCE EMITTED FROM p-TYPE GaAs DIFFUSION-DOPED WITH ZINC AND SUBJECTED TO A MAGNETIC FIELD.', Semiconductors, vol. 10, no. 6, pp. 609-612.

APA

Zverev, L. P., Negashev, S. A., & Kruzhaev, V. V. (1976). PHOTOLUMINESCENCE EMITTED FROM p-TYPE GaAs DIFFUSION-DOPED WITH ZINC AND SUBJECTED TO A MAGNETIC FIELD. Semiconductors, 10(6), 609-612.

Vancouver

Zverev LP, Negashev SA, Kruzhaev VV. PHOTOLUMINESCENCE EMITTED FROM p-TYPE GaAs DIFFUSION-DOPED WITH ZINC AND SUBJECTED TO A MAGNETIC FIELD. Semiconductors. 1976 Jan 1;10(6):609-612.

Author

Zverev, L. P. ; Negashev, S. A. ; Kruzhaev, V. V. / PHOTOLUMINESCENCE EMITTED FROM p-TYPE GaAs DIFFUSION-DOPED WITH ZINC AND SUBJECTED TO A MAGNETIC FIELD. In: Semiconductors. 1976 ; Vol. 10, No. 6. pp. 609-612.

BibTeX

@article{b8552f484cf14b31be111b38a78703e8,
title = "PHOTOLUMINESCENCE EMITTED FROM p-TYPE GaAs DIFFUSION-DOPED WITH ZINC AND SUBJECTED TO A MAGNETIC FIELD.",
author = "Zverev, {L. P.} and Negashev, {S. A.} and Kruzhaev, {V. V.}",
year = "1976",
month = jan,
day = "1",
language = "English",
volume = "10",
pages = "609--612",
journal = "Semiconductors",
issn = "0038-5700",
publisher = "American Institute of Physics Publising LLC",
number = "6",

}

RIS

TY - JOUR

T1 - PHOTOLUMINESCENCE EMITTED FROM p-TYPE GaAs DIFFUSION-DOPED WITH ZINC AND SUBJECTED TO A MAGNETIC FIELD.

AU - Zverev, L. P.

AU - Negashev, S. A.

AU - Kruzhaev, V. V.

PY - 1976/1/1

Y1 - 1976/1/1

UR - http://www.scopus.com/inward/record.url?scp=0016965234&partnerID=8YFLogxK

UR - https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=tsmetrics&SrcApp=tsm_test&DestApp=WOS_CPL&DestLinkType=FullRecord&KeyUT=A1976CJ20900001

M3 - Article

AN - SCOPUS:0016965234

VL - 10

SP - 609

EP - 612

JO - Semiconductors

JF - Semiconductors

SN - 0038-5700

IS - 6

ER -

ID: 7211975