Dislocation structure and mobility in the layered semiconductor InSe: a first-principles study › Research Explorer

Dislocation structure and mobility in the layered semiconductor InSe: a first-principles study

Research output: Contribution to journal › Article › peer-review

DOI

https://doi.org/10.1088/2053-1583/ac207b
Final published version

Original language	English
Article number	045028
Number of pages	7
Journal	2d materials
Volume	8
Issue number	4
DOIs	https://doi.org/10.1088/2053-1583/ac207b
Publication status	Published - Oct 2021

Research areas

dislocations, plasticity, InSe, semiconductors, first-principles calculations, TOTAL-ENERGY CALCULATIONS, MECHANICAL-PROPERTIES, ELECTRONIC-STRUCTURE, STACKING-FAULT, CORE STRUCTURE, INITIO, OPTOELECTRONICS, PLASTICITY, ENERGETICS, DUCTILE

ASJC Scopus subject areas

Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Chemistry(all)
Materials Science(all)

WoS ResearchAreas Categories

Materials Science, Multidisciplinary

ID: 23688979