Standard

Dislocation structure and mobility in the layered semiconductor InSe: a first-principles study. / Rudenko, A. N.; Katsnelson, M.; Gornostyrev, Yu N.
In: 2d materials, Vol. 8, No. 4, 045028, 10.2021.

Research output: Contribution to journal › Article › peer-review

Harvard

Rudenko, AN, Katsnelson, M & Gornostyrev, YN 2021, 'Dislocation structure and mobility in the layered semiconductor InSe: a first-principles study', 2d materials, vol. 8, no. 4, 045028. https://doi.org/10.1088/2053-1583/ac207b

APA

Rudenko, A. N., Katsnelson, M., & Gornostyrev, Y. N. (2021). Dislocation structure and mobility in the layered semiconductor InSe: a first-principles study. 2d materials, 8(4), [045028]. https://doi.org/10.1088/2053-1583/ac207b

Vancouver

Rudenko AN, Katsnelson M, Gornostyrev YN. Dislocation structure and mobility in the layered semiconductor InSe: a first-principles study. 2d materials. 2021 Oct;8(4):045028. doi: 10.1088/2053-1583/ac207b

Author

Rudenko, A. N. ; Katsnelson, M. ; Gornostyrev, Yu N. / Dislocation structure and mobility in the layered semiconductor InSe: a first-principles study. In: 2d materials. 2021 ; Vol. 8, No. 4.

BibTeX

@article{62c8ed15fe104cadb8aeccea4fe2a123,
title = "Dislocation structure and mobility in the layered semiconductor InSe: a first-principles study",
keywords = "dislocations, plasticity, InSe, semiconductors, first-principles calculations, TOTAL-ENERGY CALCULATIONS, MECHANICAL-PROPERTIES, ELECTRONIC-STRUCTURE, STACKING-FAULT, CORE STRUCTURE, INITIO, OPTOELECTRONICS, PLASTICITY, ENERGETICS, DUCTILE",
author = "Rudenko, {A. N.} and M. Katsnelson and Gornostyrev, {Yu N.}",
year = "2021",
month = oct,
doi = "10.1088/2053-1583/ac207b",
language = "English",
volume = "8",
journal = "2d materials",
issn = "2053-1583",
publisher = "Institute of Physics Publishing (IOP)",
number = "4",

}

RIS

TY - JOUR

T1 - Dislocation structure and mobility in the layered semiconductor InSe: a first-principles study

AU - Rudenko, A. N.

AU - Katsnelson, M.

AU - Gornostyrev, Yu N.

PY - 2021/10

Y1 - 2021/10

KW - dislocations

KW - plasticity

KW - InSe

KW - semiconductors

KW - first-principles calculations

KW - TOTAL-ENERGY CALCULATIONS

KW - MECHANICAL-PROPERTIES

KW - ELECTRONIC-STRUCTURE

KW - STACKING-FAULT

KW - CORE STRUCTURE

KW - INITIO

KW - OPTOELECTRONICS

KW - PLASTICITY

KW - ENERGETICS

KW - DUCTILE

UR - https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=tsmetrics&SrcApp=tsm_test&DestApp=WOS_CPL&DestLinkType=FullRecord&KeyUT=000694800900001

UR - http://www.scopus.com/inward/record.url?scp=85115948961&partnerID=8YFLogxK

UR - https://elibrary.ru/item.asp?id=47081330

U2 - 10.1088/2053-1583/ac207b

DO - 10.1088/2053-1583/ac207b

M3 - Article

VL - 8

JO - 2d materials

JF - 2d materials

SN - 2053-1583

IS - 4

M1 - 045028

ER -

ID: 23688979