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Atomic structure, electronic states, and optical properties of epitaxially grown β-Ga2O3 layers. / Zatsepin, D. A.; Boukhvalov, D. W.; Zatsepin, A. F. et al.
In: Superlattices and Microstructures, Vol. 120, 01.08.2018, p. 90-100.

Research output: Contribution to journal › Article › peer-review

Harvard

Zatsepin, DA, Boukhvalov, DW, Zatsepin, AF, Kuznetsova, YA, Gogova, D, Shur, VY & Esin, AA 2018, 'Atomic structure, electronic states, and optical properties of epitaxially grown β-Ga2O3 layers', Superlattices and Microstructures, vol. 120, pp. 90-100. https://doi.org/10.1016/j.spmi.2018.05.027

APA

Zatsepin, D. A., Boukhvalov, D. W., Zatsepin, A. F., Kuznetsova, Y. A., Gogova, D., Shur, V. Y., & Esin, A. A. (2018). Atomic structure, electronic states, and optical properties of epitaxially grown β-Ga2O3 layers. Superlattices and Microstructures, 120, 90-100. https://doi.org/10.1016/j.spmi.2018.05.027

Vancouver

Zatsepin DA, Boukhvalov DW, Zatsepin AF, Kuznetsova YA, Gogova D, Shur VY et al. Atomic structure, electronic states, and optical properties of epitaxially grown β-Ga2O3 layers. Superlattices and Microstructures. 2018 Aug 1;120:90-100. doi: 10.1016/j.spmi.2018.05.027

Author

Zatsepin, D. A. ; Boukhvalov, D. W. ; Zatsepin, A. F. et al. / Atomic structure, electronic states, and optical properties of epitaxially grown β-Ga2O3 layers. In: Superlattices and Microstructures. 2018 ; Vol. 120. pp. 90-100.

BibTeX

@article{712820c4eebb4ada962a140cddc4e475,
title = "Atomic structure, electronic states, and optical properties of epitaxially grown β-Ga2O3 layers",
keywords = "Defects, DFT, Epitaxy, Gallium oxide, Luminescence, Semiconductors, XPS, OXIDE, GA2O3, THIN-FILM",
author = "Zatsepin, {D. A.} and Boukhvalov, {D. W.} and Zatsepin, {A. F.} and Kuznetsova, {Yu A.} and D. Gogova and Shur, {V. Ya} and Esin, {A. A.}",
year = "2018",
month = aug,
day = "1",
doi = "10.1016/j.spmi.2018.05.027",
language = "English",
volume = "120",
pages = "90--100",
journal = "Superlattices and Microstructures",
issn = "0749-6036",
publisher = "Elsevier BV",

}

RIS

TY - JOUR

T1 - Atomic structure, electronic states, and optical properties of epitaxially grown β-Ga2O3 layers

AU - Zatsepin, D. A.

AU - Boukhvalov, D. W.

AU - Zatsepin, A. F.

AU - Kuznetsova, Yu A.

AU - Gogova, D.

AU - Shur, V. Ya

AU - Esin, A. A.

PY - 2018/8/1

Y1 - 2018/8/1

KW - Defects

KW - DFT

KW - Epitaxy

KW - Gallium oxide

KW - Luminescence

KW - Semiconductors

KW - XPS

KW - OXIDE

KW - GA2O3

KW - THIN-FILM

UR - http://www.scopus.com/inward/record.url?scp=85048523832&partnerID=8YFLogxK

UR - https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=tsmetrics&SrcApp=tsm_test&DestApp=WOS_CPL&DestLinkType=FullRecord&KeyUT=000445713700012

UR - https://elibrary.ru/item.asp?id=35735952

U2 - 10.1016/j.spmi.2018.05.027

DO - 10.1016/j.spmi.2018.05.027

M3 - Article

AN - SCOPUS:85048523832

VL - 120

SP - 90

EP - 100

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

SN - 0749-6036

ER -

ID: 7416305