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Atomic structure, electronic states, and optical properties of epitaxially grown β-Ga
2
O
3
layers
Research output
:
Contribution to journal
›
Article
›
peer-review
Department of Experimental Physics
Department of Theoretical Physics and Applied Mathematics
Department of Physical Techniques and Devices for Quality Control
Department of Condensed Matter Physics and Nanoscale Systems
Section of Optoelectronics and Semiconductor Technology
Institute of Physics and Technology
Institute of Natural Sciences and Mathematics
Overview
Cite this
DOI
https://doi.org/10.1016/j.spmi.2018.05.027
Final published version
D. A. Zatsepin
D. W. Boukhvalov
A. F. Zatsepin
Yu A. Kuznetsova
D. Gogova
V. Ya Shur
A. A. Esin
Original language
English
Pages (from-to)
90-100
Number of pages
11
Journal
Superlattices and Microstructures
Volume
120
DOIs
https://doi.org/10.1016/j.spmi.2018.05.027
Publication status
Published -
1 Aug 2018
WoS ResearchAreas Categories
Physics, Condensed Matter
ASJC Scopus subject areas
Condensed Matter Physics
Materials Science(all)
Electrical and Electronic Engineering
Research areas
Defects, DFT, Epitaxy, Gallium oxide, Luminescence, Semiconductors, XPS, OXIDE, GA2O3, THIN-FILM
ID: 7416305
