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Ultrasonic investigation of the Jahn-Teller effect in GaAs semiconductors doped by transition metals. / Averkiev, N. S.; Bersuker, I. B.; Gudkov, V. V. и др.
в: Journal of Applied Physics, Том 116, № 10, 103708, 14.09.2014.

Результаты исследований: Вклад в журнал › Статья › Рецензирование

Harvard

Averkiev, NS, Bersuker, IB, Gudkov, VV, Baryshnikov, KA, Zhevstovskikh, IV, Mayakin, VY, Monakhov, AM, Sarychev, MN, Sedov, VE & Surikov, VT 2014, 'Ultrasonic investigation of the Jahn-Teller effect in GaAs semiconductors doped by transition metals', Journal of Applied Physics, Том. 116, № 10, 103708. https://doi.org/10.1063/1.4895475

APA

Averkiev, N. S., Bersuker, I. B., Gudkov, V. V., Baryshnikov, K. A., Zhevstovskikh, I. V., Mayakin, V. Y., Monakhov, A. M., Sarychev, M. N., Sedov, V. E., & Surikov, V. T. (2014). Ultrasonic investigation of the Jahn-Teller effect in GaAs semiconductors doped by transition metals. Journal of Applied Physics, 116(10), [103708]. https://doi.org/10.1063/1.4895475

Vancouver

Averkiev NS, Bersuker IB, Gudkov VV, Baryshnikov KA, Zhevstovskikh IV, Mayakin VY и др. Ultrasonic investigation of the Jahn-Teller effect in GaAs semiconductors doped by transition metals. Journal of Applied Physics. 2014 сент. 14;116(10):103708. doi: 10.1063/1.4895475

Author

Averkiev, N. S. ; Bersuker, I. B. ; Gudkov, V. V. и др. / Ultrasonic investigation of the Jahn-Teller effect in GaAs semiconductors doped by transition metals. в: Journal of Applied Physics. 2014 ; Том 116, № 10.

BibTeX

@article{c5160e60ab7544e5881ab37867765b8d,
title = "Ultrasonic investigation of the Jahn-Teller effect in GaAs semiconductors doped by transition metals",
keywords = "IMPURITY CENTERS, DEFORMATION, ATTENUATION, RELAXATION, ABSORPTION, CRYSTALS, MN",
author = "Averkiev, {N. S.} and Bersuker, {I. B.} and Gudkov, {V. V.} and Baryshnikov, {K. A.} and Zhevstovskikh, {I. V.} and Mayakin, {V. Yu.} and Monakhov, {A. M.} and Sarychev, {M. N.} and Sedov, {V. E.} and Surikov, {V. T.}",
year = "2014",
month = sep,
day = "14",
doi = "10.1063/1.4895475",
language = "English",
volume = "116",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "10",

}

RIS

TY - JOUR

T1 - Ultrasonic investigation of the Jahn-Teller effect in GaAs semiconductors doped by transition metals

AU - Averkiev, N. S.

AU - Bersuker, I. B.

AU - Gudkov, V. V.

AU - Baryshnikov, K. A.

AU - Zhevstovskikh, I. V.

AU - Mayakin, V. Yu.

AU - Monakhov, A. M.

AU - Sarychev, M. N.

AU - Sedov, V. E.

AU - Surikov, V. T.

PY - 2014/9/14

Y1 - 2014/9/14

KW - IMPURITY CENTERS

KW - DEFORMATION

KW - ATTENUATION

KW - RELAXATION

KW - ABSORPTION

KW - CRYSTALS

KW - MN

UR - http://www.scopus.com/inward/record.url?scp=84924567624&partnerID=8YFLogxK

UR - https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=tsmetrics&SrcApp=tsm_test&DestApp=WOS_CPL&DestLinkType=FullRecord&KeyUT=000342833700041

U2 - 10.1063/1.4895475

DO - 10.1063/1.4895475

M3 - Article

AN - SCOPUS:84924567624

VL - 116

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 10

M1 - 103708

ER -

ID: 360842