Standard

MECHANISM OF BAND GAP VARIATION IN HEAVILY DOPED GALLIUM ARSENIDE. / Zverev, L. P.; Negashev, S. A.; Kruzhaev, V. V. и др.
в: Semiconductors, Том 11, № 6, 01.01.1977, стр. 603-605.

Результаты исследований: Вклад в журнал › Статья › Рецензирование

Harvard

Zverev, LP, Negashev, SA, Kruzhaev, VV & Min'kov, GM 1977, 'MECHANISM OF BAND GAP VARIATION IN HEAVILY DOPED GALLIUM ARSENIDE.', Semiconductors, Том. 11, № 6, стр. 603-605.

APA

Zverev, L. P., Negashev, S. A., Kruzhaev, V. V., & Min'kov, G. M. (1977). MECHANISM OF BAND GAP VARIATION IN HEAVILY DOPED GALLIUM ARSENIDE. Semiconductors, 11(6), 603-605.

Vancouver

Zverev LP, Negashev SA, Kruzhaev VV, Min'kov GM. MECHANISM OF BAND GAP VARIATION IN HEAVILY DOPED GALLIUM ARSENIDE. Semiconductors. 1977 янв. 1;11(6):603-605.

Author

Zverev, L. P. ; Negashev, S. A. ; Kruzhaev, V. V. и др. / MECHANISM OF BAND GAP VARIATION IN HEAVILY DOPED GALLIUM ARSENIDE. в: Semiconductors. 1977 ; Том 11, № 6. стр. 603-605.

BibTeX

@article{d11e13b3c95f4da281b51625b4aaf2f2,
title = "MECHANISM OF BAND GAP VARIATION IN HEAVILY DOPED GALLIUM ARSENIDE.",
author = "Zverev, {L. P.} and Negashev, {S. A.} and Kruzhaev, {V. V.} and Min'kov, {G. M.}",
year = "1977",
month = jan,
day = "1",
language = "English",
volume = "11",
pages = "603--605",
journal = "Semiconductors",
issn = "0038-5700",
publisher = "American Institute of Physics Publising LLC",
number = "6",

}

RIS

TY - JOUR

T1 - MECHANISM OF BAND GAP VARIATION IN HEAVILY DOPED GALLIUM ARSENIDE.

AU - Zverev, L. P.

AU - Negashev, S. A.

AU - Kruzhaev, V. V.

AU - Min'kov, G. M.

PY - 1977/1/1

Y1 - 1977/1/1

UR - http://www.scopus.com/inward/record.url?scp=0017500744&partnerID=8YFLogxK

UR - https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=tsmetrics&SrcApp=tsm_test&DestApp=WOS_CPL&DestLinkType=FullRecord&KeyUT=A1977EC19900001

M3 - Article

AN - SCOPUS:0017500744

VL - 11

SP - 603

EP - 605

JO - Semiconductors

JF - Semiconductors

SN - 0038-5700

IS - 6

ER -

ID: 7211541