Результаты исследований: Вклад в журнал › Статья › Рецензирование
Результаты исследований: Вклад в журнал › Статья › Рецензирование
}
TY - JOUR
T1 - IRRADIATION OF CU(IN, GA)SE-=SUB=-2-=/SUB=- THIN FILMS BY 10 MEV ELECTRONS AT 77 K: EFFECT ON PHOTOLUMINESCENCE SPECTRA
AU - Sulimov, M. A.
AU - Sarychev, M. N.
AU - Mogilnikov, I. A.
AU - Ivanov, V. Yu.
AU - Volkov, V. A.
AU - Zhivulko, V. D.
AU - Mudryi, A. V.
AU - Yakushev, M. V.
PY - 2022
Y1 - 2022
N2 - Thin films of Cu(In,Ga)Se2 on Mo/glass were irradiated by 10 MeV electrons at 77 K and examined by photoluminescence at 77 K before and after irradiation without warming the samples as well as after warming to 300 K. The photoluminescence spectra revealed a broad band constituting 3 merged peaks (P1, P2, P3) assigned to: band-to-band recombination (P1) and recombination of free electrons with holes localised at acceptors influenced by the valence band tail (P2, P3). Irradiation reduced the intensity of the peaks due to deep traps generated by electrons and anomalously reduced the degree of compensation of the material. Keywords: thin films, irradiation, photoluminescence, recombination, band-to-band.
AB - Thin films of Cu(In,Ga)Se2 on Mo/glass were irradiated by 10 MeV electrons at 77 K and examined by photoluminescence at 77 K before and after irradiation without warming the samples as well as after warming to 300 K. The photoluminescence spectra revealed a broad band constituting 3 merged peaks (P1, P2, P3) assigned to: band-to-band recombination (P1) and recombination of free electrons with holes localised at acceptors influenced by the valence band tail (P2, P3). Irradiation reduced the intensity of the peaks due to deep traps generated by electrons and anomalously reduced the degree of compensation of the material. Keywords: thin films, irradiation, photoluminescence, recombination, band-to-band.
UR - https://www.elibrary.ru/item.asp?id=58112465
U2 - 10.21883/ftp.2022.06.52617.9841a
DO - 10.21883/ftp.2022.06.52617.9841a
M3 - Article
VL - 56
SP - 546
EP - 546
JO - Физика и техника полупроводников
JF - Физика и техника полупроводников
SN - 0015-3222
IS - 6
ER -
ID: 50709693