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IRRADIATION OF CU(IN, GA)SE-=SUB=-2-=/SUB=- THIN FILMS BY 10 MEV ELECTRONS AT 77 K: EFFECT ON PHOTOLUMINESCENCE SPECTRA. / Sulimov, M. A.; Sarychev, M. N.; Mogilnikov, I. A. et al.
In: Физика и техника полупроводников, Vol. 56, No. 6, 2022, p. 546-546.

Research output: Contribution to journal › Article › peer-review

Harvard

Sulimov, MA, Sarychev, MN, Mogilnikov, IA, Ivanov, VY, Volkov, VA, Zhivulko, VD, Mudryi, AV & Yakushev, MV 2022, 'IRRADIATION OF CU(IN, GA)SE-=SUB=-2-=/SUB=- THIN FILMS BY 10 MEV ELECTRONS AT 77 K: EFFECT ON PHOTOLUMINESCENCE SPECTRA', Физика и техника полупроводников, vol. 56, no. 6, pp. 546-546. https://doi.org/10.21883/ftp.2022.06.52617.9841a

APA

Sulimov, M. A., Sarychev, M. N., Mogilnikov, I. A., Ivanov, V. Y., Volkov, V. A., Zhivulko, V. D., Mudryi, A. V., & Yakushev, M. V. (2022). IRRADIATION OF CU(IN, GA)SE-=SUB=-2-=/SUB=- THIN FILMS BY 10 MEV ELECTRONS AT 77 K: EFFECT ON PHOTOLUMINESCENCE SPECTRA. Физика и техника полупроводников, 56(6), 546-546. https://doi.org/10.21883/ftp.2022.06.52617.9841a

Vancouver

Sulimov MA, Sarychev MN, Mogilnikov IA, Ivanov VY, Volkov VA, Zhivulko VD et al. IRRADIATION OF CU(IN, GA)SE-=SUB=-2-=/SUB=- THIN FILMS BY 10 MEV ELECTRONS AT 77 K: EFFECT ON PHOTOLUMINESCENCE SPECTRA. Физика и техника полупроводников. 2022;56(6):546-546. doi: 10.21883/ftp.2022.06.52617.9841a

Author

Sulimov, M. A. ; Sarychev, M. N. ; Mogilnikov, I. A. et al. / IRRADIATION OF CU(IN, GA)SE-=SUB=-2-=/SUB=- THIN FILMS BY 10 MEV ELECTRONS AT 77 K: EFFECT ON PHOTOLUMINESCENCE SPECTRA. In: Физика и техника полупроводников. 2022 ; Vol. 56, No. 6. pp. 546-546.

BibTeX

@article{65225e2935064d6c88b3bd31e907d701,
title = "IRRADIATION OF CU(IN, GA)SE-=SUB=-2-=/SUB=- THIN FILMS BY 10 MEV ELECTRONS AT 77 K: EFFECT ON PHOTOLUMINESCENCE SPECTRA",
abstract = "Thin films of Cu(In,Ga)Se2 on Mo/glass were irradiated by 10 MeV electrons at 77 K and examined by photoluminescence at 77 K before and after irradiation without warming the samples as well as after warming to 300 K. The photoluminescence spectra revealed a broad band constituting 3 merged peaks (P1, P2, P3) assigned to: band-to-band recombination (P1) and recombination of free electrons with holes localised at acceptors influenced by the valence band tail (P2, P3). Irradiation reduced the intensity of the peaks due to deep traps generated by electrons and anomalously reduced the degree of compensation of the material. Keywords: thin films, irradiation, photoluminescence, recombination, band-to-band.",
author = "Sulimov, {M. A.} and Sarychev, {M. N.} and Mogilnikov, {I. A.} and Ivanov, {V. Yu.} and Volkov, {V. A.} and Zhivulko, {V. D.} and Mudryi, {A. V.} and Yakushev, {M. V.}",
year = "2022",
doi = "10.21883/ftp.2022.06.52617.9841a",
language = "English",
volume = "56",
pages = "546--546",
journal = "Физика и техника полупроводников",
issn = "0015-3222",
publisher = "Издательство {"}Наука{"}",
number = "6",

}

RIS

TY - JOUR

T1 - IRRADIATION OF CU(IN, GA)SE-=SUB=-2-=/SUB=- THIN FILMS BY 10 MEV ELECTRONS AT 77 K: EFFECT ON PHOTOLUMINESCENCE SPECTRA

AU - Sulimov, M. A.

AU - Sarychev, M. N.

AU - Mogilnikov, I. A.

AU - Ivanov, V. Yu.

AU - Volkov, V. A.

AU - Zhivulko, V. D.

AU - Mudryi, A. V.

AU - Yakushev, M. V.

PY - 2022

Y1 - 2022

N2 - Thin films of Cu(In,Ga)Se2 on Mo/glass were irradiated by 10 MeV electrons at 77 K and examined by photoluminescence at 77 K before and after irradiation without warming the samples as well as after warming to 300 K. The photoluminescence spectra revealed a broad band constituting 3 merged peaks (P1, P2, P3) assigned to: band-to-band recombination (P1) and recombination of free electrons with holes localised at acceptors influenced by the valence band tail (P2, P3). Irradiation reduced the intensity of the peaks due to deep traps generated by electrons and anomalously reduced the degree of compensation of the material. Keywords: thin films, irradiation, photoluminescence, recombination, band-to-band.

AB - Thin films of Cu(In,Ga)Se2 on Mo/glass were irradiated by 10 MeV electrons at 77 K and examined by photoluminescence at 77 K before and after irradiation without warming the samples as well as after warming to 300 K. The photoluminescence spectra revealed a broad band constituting 3 merged peaks (P1, P2, P3) assigned to: band-to-band recombination (P1) and recombination of free electrons with holes localised at acceptors influenced by the valence band tail (P2, P3). Irradiation reduced the intensity of the peaks due to deep traps generated by electrons and anomalously reduced the degree of compensation of the material. Keywords: thin films, irradiation, photoluminescence, recombination, band-to-band.

UR - https://www.elibrary.ru/item.asp?id=58112465

U2 - 10.21883/ftp.2022.06.52617.9841a

DO - 10.21883/ftp.2022.06.52617.9841a

M3 - Article

VL - 56

SP - 546

EP - 546

JO - Физика и техника полупроводников

JF - Физика и техника полупроводников

SN - 0015-3222

IS - 6

ER -

ID: 50709693