Ultrasonic investigation of the Jahn-Teller effect in GaAs semiconductors doped by transition metals › Research Explorer

DOI

https://doi.org/10.1063/1.4895475
Final published version

N. S. Averkiev
I. B. Bersuker
V. V. Gudkov
K. A. Baryshnikov
I. V. Zhevstovskikh
V. Yu. Mayakin
A. M. Monakhov
M. N. Sarychev
V. E. Sedov
V. T. Surikov

Original language	English
Article number	103708
Number of pages	7
Journal	Journal of Applied Physics
Volume	116
Issue number	10
DOIs	https://doi.org/10.1063/1.4895475
Publication status	Published - 14 Sept 2014

ASJC Scopus subject areas

Physics and Astronomy(all)

Research areas

IMPURITY CENTERS, DEFORMATION, ATTENUATION, RELAXATION, ABSORPTION, CRYSTALS, MN

ID: 360842