Effect of pulsed ion-beam treatment on the electronic and optical properties of GaN epitaxial films on sapphire › Research Explorer

DOI

https://doi.org/10.1016/j.apsusc.2022.153023
Final published version

D. A. Zatsepin
D. W. Boukhvalov
E. A. Buntov
A. F. Zatsepin
R. I. Batalov
H. A. Novikov
R. M. Bayazitov

Original language	English
Article number	153023
Journal	Applied Surface Science
Volume	590
DOIs	https://doi.org/10.1016/j.apsusc.2022.153023
Publication status	Published - 15 Jul 2022

Research areas

Acidification of surface, Bandgap, Density functional theory, Pulsed ion beam, gallium nitride, Defects, Surface treatment, X-ray photoelectron spectroscopy

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

WoS ResearchAreas Categories

Chemistry, Physical
Materials Science, Coatings & Films
Physics, Applied
Physics, Condensed Matter

ID: 29927158