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Conductance of a lateral p—n junction in two-dimensional HgTe structures with an inverted spectrum: The role of edge states
Research output
:
Contribution to journal
›
Article
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peer-review
Department of Physics and Astronomy
Section of Optoelectronics and Semiconductor Technology
Department of Condensed Matter Physics and Nanoscale Systems
Institute of Natural Sciences and Mathematics
Overview
Cite this
DOI
https://doi.org/10.1134/S0021364015070115
Final published version
G. M. Min'kov
A. A. Sherstobitov
A. V. Germanenko
O. E. Rut
S. A. Dvoretskii
N. N. Mikhailov
Original language
English
Pages (from-to)
469-473
Number of pages
5
Journal
JETP Letters
Volume
101
Issue number
7
DOIs
https://doi.org/10.1134/S0021364015070115
Publication status
Published -
Apr 2015
ASJC Scopus subject areas
Physics and Astronomy (miscellaneous)
Level of Research Output
VAK List
Research areas
QUANTUM-WELLS
GRNTI
29.00.00 PHYSICS
ID: 330098