FIELD: chemistry.
SUBSTANCE: invention refers to a method for producing silica glass implanted with zinc ions and containing a surface layer with zinc nanoclusters. The method is applicable for manufacturing components of micro- (nano-) and optoelectronic devices. Silica glass is implanted with zinc ions and annealed in air. Zinc ions are implanted in the pulse mode at pulse length 0.3-0.4 ms, pulse repetition frequency 12.5-20 Hz, ionic flux pulse density 0.8-0.9 mA/cm2, irradiation dose (4.5-5)±1016 ion/cm2, zinc ion power 30-35 keV and silica temperature 60-350°C. The annealing procedure is performed at temperature 800-900°C for 50-70 min in air.
EFFECT: producing high near IR radiant intensity glass.