Standard

The effect of sulfur precursor on the morphology, properties and formation mechanism of chemical bath deposited Pb1+xS thin solid films. / Kozhevnikova, N. S.; Maskaeva, L. N.; Enyashin, A. N. и др.
в: Materials Chemistry and Physics, Том 305, 127936, 01.09.2023.

Результаты исследований: Вклад в журнал › Статья › Рецензирование

Harvard

Kozhevnikova, NS, Maskaeva, LN, Enyashin, AN, Uritskaya, AA, Pozdin, AV, Voronin, VI, Selyanin, IO, Mostovshchikova, EV & Markov, VF 2023, 'The effect of sulfur precursor on the morphology, properties and formation mechanism of chemical bath deposited Pb1+xS thin solid films', Materials Chemistry and Physics, Том. 305, 127936. https://doi.org/10.1016/j.matchemphys.2023.127936

APA

Kozhevnikova, N. S., Maskaeva, L. N., Enyashin, A. N., Uritskaya, A. A., Pozdin, A. V., Voronin, V. I., Selyanin, I. O., Mostovshchikova, E. V., & Markov, V. F. (2023). The effect of sulfur precursor on the morphology, properties and formation mechanism of chemical bath deposited Pb1+xS thin solid films. Materials Chemistry and Physics, 305, [127936]. https://doi.org/10.1016/j.matchemphys.2023.127936

Vancouver

Kozhevnikova NS, Maskaeva LN, Enyashin AN, Uritskaya AA, Pozdin AV, Voronin VI и др. The effect of sulfur precursor on the morphology, properties and formation mechanism of chemical bath deposited Pb1+xS thin solid films. Materials Chemistry and Physics. 2023 сент. 1;305:127936. doi: 10.1016/j.matchemphys.2023.127936

Author

Kozhevnikova, N. S. ; Maskaeva, L. N. ; Enyashin, A. N. и др. / The effect of sulfur precursor on the morphology, properties and formation mechanism of chemical bath deposited Pb1+xS thin solid films. в: Materials Chemistry and Physics. 2023 ; Том 305.

BibTeX

@article{1dc247538c164d2db428224d1478be43,
title = "The effect of sulfur precursor on the morphology, properties and formation mechanism of chemical bath deposited Pb1+xS thin solid films",
abstract = "Pb1+хS thin films of 190–360 nm thickness have been synthesized on glass substrates by chemical bath deposition from aqueous solutions using different thioamides (thiourea, N-allylthiourea, thioacetamide) as sulfur precursors. The obtained films are polycrystalline semiconductors with n-type conductivity. The effect of the sulfur origin on the crystalline structure, morphology and formation mechanism of Pb1+хS thin films is analyzed. The formal rate constants of Pb1+хS formation reactions are determined. Quantum-chemical calculations approve that a lead superstoichiometry in the obtained films may be attributed to types of point defects: atomic vacancies in the sulfur sublattice and the lead doping the sulfur sublattice. A correlation is established between the amount of lead excess and the optical band gap of Pb1+хS: the greater the excess of lead is, the wider the band gap is. The fractal analysis of Pb1+хS thin films evidences the film growth obeying model of a cluster-by-cluster association in three-dimensional space.",
author = "Kozhevnikova, {N. S.} and Maskaeva, {L. N.} and Enyashin, {A. N.} and Uritskaya, {A. A.} and Pozdin, {A. V.} and Voronin, {V. I.} and Selyanin, {I. O.} and Mostovshchikova, {E. V.} and Markov, {V. F.}",
note = "This work was financially supported by the Ministry of Science and Higher Education of the Russian Federation , State Contract no FEUZ-20223-0021 ( H687.42B.325/23 ). The work of N.K., I.S. and A.E. was performed within the state assignment АААА-А19-119031890025-9. The results of sections “Phase composition of Pb 1+x S thin films” and “Optical properties of Pb 1+x S thin films” were obtained within the state assignment of Ministry of Science and Higher Education of the Russian Federation (themes “Flux” No. 122021000031-8 and “Spin” No. 122021000036-3).",
year = "2023",
month = sep,
day = "1",
doi = "10.1016/j.matchemphys.2023.127936",
language = "English",
volume = "305",
journal = "Materials Chemistry and Physics",
issn = "0254-0584",
publisher = "Elsevier BV",

}

RIS

TY - JOUR

T1 - The effect of sulfur precursor on the morphology, properties and formation mechanism of chemical bath deposited Pb1+xS thin solid films

AU - Kozhevnikova, N. S.

AU - Maskaeva, L. N.

AU - Enyashin, A. N.

AU - Uritskaya, A. A.

AU - Pozdin, A. V.

AU - Voronin, V. I.

AU - Selyanin, I. O.

AU - Mostovshchikova, E. V.

AU - Markov, V. F.

N1 - This work was financially supported by the Ministry of Science and Higher Education of the Russian Federation , State Contract no FEUZ-20223-0021 ( H687.42B.325/23 ). The work of N.K., I.S. and A.E. was performed within the state assignment АААА-А19-119031890025-9. The results of sections “Phase composition of Pb 1+x S thin films” and “Optical properties of Pb 1+x S thin films” were obtained within the state assignment of Ministry of Science and Higher Education of the Russian Federation (themes “Flux” No. 122021000031-8 and “Spin” No. 122021000036-3).

PY - 2023/9/1

Y1 - 2023/9/1

N2 - Pb1+хS thin films of 190–360 nm thickness have been synthesized on glass substrates by chemical bath deposition from aqueous solutions using different thioamides (thiourea, N-allylthiourea, thioacetamide) as sulfur precursors. The obtained films are polycrystalline semiconductors with n-type conductivity. The effect of the sulfur origin on the crystalline structure, morphology and formation mechanism of Pb1+хS thin films is analyzed. The formal rate constants of Pb1+хS formation reactions are determined. Quantum-chemical calculations approve that a lead superstoichiometry in the obtained films may be attributed to types of point defects: atomic vacancies in the sulfur sublattice and the lead doping the sulfur sublattice. A correlation is established between the amount of lead excess and the optical band gap of Pb1+хS: the greater the excess of lead is, the wider the band gap is. The fractal analysis of Pb1+хS thin films evidences the film growth obeying model of a cluster-by-cluster association in three-dimensional space.

AB - Pb1+хS thin films of 190–360 nm thickness have been synthesized on glass substrates by chemical bath deposition from aqueous solutions using different thioamides (thiourea, N-allylthiourea, thioacetamide) as sulfur precursors. The obtained films are polycrystalline semiconductors with n-type conductivity. The effect of the sulfur origin on the crystalline structure, morphology and formation mechanism of Pb1+хS thin films is analyzed. The formal rate constants of Pb1+хS formation reactions are determined. Quantum-chemical calculations approve that a lead superstoichiometry in the obtained films may be attributed to types of point defects: atomic vacancies in the sulfur sublattice and the lead doping the sulfur sublattice. A correlation is established between the amount of lead excess and the optical band gap of Pb1+хS: the greater the excess of lead is, the wider the band gap is. The fractal analysis of Pb1+хS thin films evidences the film growth obeying model of a cluster-by-cluster association in three-dimensional space.

UR - http://www.scopus.com/inward/record.url?partnerID=8YFLogxK&scp=85159628595

UR - https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=tsmetrics&SrcApp=tsm_test&DestApp=WOS_CPL&DestLinkType=FullRecord&KeyUT=001012867800001

U2 - 10.1016/j.matchemphys.2023.127936

DO - 10.1016/j.matchemphys.2023.127936

M3 - Article

VL - 305

JO - Materials Chemistry and Physics

JF - Materials Chemistry and Physics

SN - 0254-0584

M1 - 127936

ER -

ID: 40101363