TY - JOUR

T1 - Schottky-Diode Design for Future High-Speed Telecommunications

AU - Wong, Chi-Ho

AU - Lam, Leung-Yuk Frank

AU - Hu, Xijun

AU - Tsui , Chi-Pong

AU - Zatsepin, Anatoly

N1 - Текст о финансировании #1 This research was funded by Russian Federation for support (Ural Federal University Program of Development within the Priority-2030 Program) and the Department of Industrial and Systems Engineering, The Hong Kong Polytechnic University. A.F.Z. thanks the Ministry of Science and Higher Education of the Russian Federation for support (Ural Federal University Program of Development within the Priority-2030 Program, project. 4.38). C.H.W thanks Research Institute for Advanced Manufacturing, The Hong Kong Polytechnic University. The authors would like to thank for the financial support from the Department of Industrial and Systems Engineering, The Hong Kong Polytechnic University. The APC was funded by Department of Industrial and Systems Engineering, The Hong Kong Polytechnic University. Текст о финансировании #2 We thank the Department of Industrial and Systems Engineering and Research Institute for Advanced Manufacturing at The Hong Kong Polytechnic University. We also thank the Ministry of Science and Higher Education of the Russian Federation for support.

PY - 2023

Y1 - 2023

N2 - The impact of 5G communication is expected to be widespread and transformative. It promises to provide faster mobile broadband speeds, lower latency, improved network reliability and capacity, and more efficient use of wireless technologies. The Schottky diode, a BN/GaN layered composite contacting bulk aluminum, is theoretically plausible to harvest wireless energy above X-band. According to our first principle calculation, the insertion of GaN layers dramatically influences the optical properties of the layered composite. The relative dielectric constant of BN/GaN layered composite as a function of layer-to-layer separation is investigated where the optimized dielectric constant is ~2.5. To push the dielectric constant approaching ~1 for high-speed telecommunication, we upgrade our BN-based Schottky diode via nanostructuring, and we find that the relative dielectric constant of BN monolayer (semiconductor side) can be minimized to ~1.5 only if it is deposited on an aluminum monolayer (metal side). It is rare to find a semiconductor with a dielectric constant close to 1, and our findings may push the cut-off frequency of the Al/BN-based rectenna to the high-band 5G network. © 2023 by the authors.

AB - The impact of 5G communication is expected to be widespread and transformative. It promises to provide faster mobile broadband speeds, lower latency, improved network reliability and capacity, and more efficient use of wireless technologies. The Schottky diode, a BN/GaN layered composite contacting bulk aluminum, is theoretically plausible to harvest wireless energy above X-band. According to our first principle calculation, the insertion of GaN layers dramatically influences the optical properties of the layered composite. The relative dielectric constant of BN/GaN layered composite as a function of layer-to-layer separation is investigated where the optimized dielectric constant is ~2.5. To push the dielectric constant approaching ~1 for high-speed telecommunication, we upgrade our BN-based Schottky diode via nanostructuring, and we find that the relative dielectric constant of BN monolayer (semiconductor side) can be minimized to ~1.5 only if it is deposited on an aluminum monolayer (metal side). It is rare to find a semiconductor with a dielectric constant close to 1, and our findings may push the cut-off frequency of the Al/BN-based rectenna to the high-band 5G network. © 2023 by the authors.

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U2 - 10.3390/nano13091448

DO - 10.3390/nano13091448

M3 - Article

VL - 13

JO - Nanomaterials

JF - Nanomaterials

SN - 2079-4991

IS - 9

M1 - 1448

ER -