Standard

MECHANISM OF ENERGY RELAXATION IN GaAs AT LOW TEMPERATURES. / Zverev, L. P.; Min'kov, G. M.; Negashev, S. A. и др.
в: Semiconductors, Том 10, № 12, 01.01.1976, стр. 1388-1390.

Результаты исследований: Вклад в журнал › Статья › Рецензирование

Harvard

Zverev, LP, Min'kov, GM, Negashev, SA & Kruzhaev, VV 1976, 'MECHANISM OF ENERGY RELAXATION IN GaAs AT LOW TEMPERATURES.', Semiconductors, Том. 10, № 12, стр. 1388-1390.

APA

Zverev, L. P., Min'kov, G. M., Negashev, S. A., & Kruzhaev, V. V. (1976). MECHANISM OF ENERGY RELAXATION IN GaAs AT LOW TEMPERATURES. Semiconductors, 10(12), 1388-1390.

Vancouver

Zverev LP, Min'kov GM, Negashev SA, Kruzhaev VV. MECHANISM OF ENERGY RELAXATION IN GaAs AT LOW TEMPERATURES. Semiconductors. 1976 янв. 1;10(12):1388-1390.

Author

Zverev, L. P. ; Min'kov, G. M. ; Negashev, S. A. и др. / MECHANISM OF ENERGY RELAXATION IN GaAs AT LOW TEMPERATURES. в: Semiconductors. 1976 ; Том 10, № 12. стр. 1388-1390.

BibTeX

@article{4e34ceb8afb443faaeef1717f24eddb1,
title = "MECHANISM OF ENERGY RELAXATION IN GaAs AT LOW TEMPERATURES.",
author = "Zverev, {L. P.} and Min'kov, {G. M.} and Negashev, {S. A.} and Kruzhaev, {V. V.}",
year = "1976",
month = jan,
day = "1",
language = "English",
volume = "10",
pages = "1388--1390",
journal = "Semiconductors",
issn = "0038-5700",
publisher = "American Institute of Physics Publising LLC",
number = "12",

}

RIS

TY - JOUR

T1 - MECHANISM OF ENERGY RELAXATION IN GaAs AT LOW TEMPERATURES.

AU - Zverev, L. P.

AU - Min'kov, G. M.

AU - Negashev, S. A.

AU - Kruzhaev, V. V.

PY - 1976/1/1

Y1 - 1976/1/1

UR - http://www.scopus.com/inward/record.url?scp=0017246757&partnerID=8YFLogxK

UR - https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=tsmetrics&SrcApp=tsm_test&DestApp=WOS_CPL&DestLinkType=FullRecord&KeyUT=A1976DG11700022

M3 - Article

AN - SCOPUS:0017246757

VL - 10

SP - 1388

EP - 1390

JO - Semiconductors

JF - Semiconductors

SN - 0038-5700

IS - 12

ER -

ID: 7211757