It is shown that in the resonance scattering of electrons on donor impurities of transition elements in semiconductors there is a contribution to the spin susceptibility from the electron density localized at the impurities. The Curie constant due to this has an unusual dependence on the impurity concentration. An expression for the spin susceptibility of resonantly scattered electrons is obtained in the Friedel approach. The experimental data obtained on mercury selenide containing iron impurities confirm the theoretical results and permit determination of the effective spin of the resonance state.