Magnetic properties and peculiarities of the domain structure of multilayer [Ti/FeNi]х/Cu/[FeNi/Ti]x elements, the geometry of which ensures the high magnetoimpedance effect, are studied by varying the number of layers in the range x = 0–5. Peculiarities of the magnetization processes of the multilayer structures, which are magnetized at both substrate and free surfaces, are analyzed. It has been found that elements in which the magnetization reversal from the free side occurs by rotation of the magnetization vector have a higher magnetoimpedance effect compared to elements in which the magnetization reversal occurs with the formation of 180° domain walls both in the layer from the side of the substrate and the free layer as well.