Standard

High-Performance Organic Field-Effect Transistors Using Rare Earth Metal Oxides as Dielectrics. / Talalaev, Filipp; Luchkin, Sergey; Mumyatov, Alexander V. и др.
в: ACS Applied Electronic Materials, Том 5, № 4, 25.04.2023, стр. 2000-2006.

Результаты исследований: Вклад в журнал › Статья › Рецензирование

Harvard

Talalaev, F, Luchkin, S, Mumyatov, AV, Zhidkov, IS, Lobanov, MV, Emelianov, NA, Babenko, SD, Kurmaev, EZ, Aldoshin, SM & Troshin, PA 2023, 'High-Performance Organic Field-Effect Transistors Using Rare Earth Metal Oxides as Dielectrics', ACS Applied Electronic Materials, Том. 5, № 4, стр. 2000-2006. https://doi.org/10.1021/acsaelm.2c01334

APA

Talalaev, F., Luchkin, S., Mumyatov, A. V., Zhidkov, I. S., Lobanov, M. V., Emelianov, N. A., Babenko, S. D., Kurmaev, E. Z., Aldoshin, S. M., & Troshin, P. A. (2023). High-Performance Organic Field-Effect Transistors Using Rare Earth Metal Oxides as Dielectrics. ACS Applied Electronic Materials, 5(4), 2000-2006. https://doi.org/10.1021/acsaelm.2c01334

Vancouver

Talalaev F, Luchkin S, Mumyatov AV, Zhidkov IS, Lobanov MV, Emelianov NA и др. High-Performance Organic Field-Effect Transistors Using Rare Earth Metal Oxides as Dielectrics. ACS Applied Electronic Materials. 2023 апр. 25;5(4):2000-2006. doi: 10.1021/acsaelm.2c01334

Author

Talalaev, Filipp ; Luchkin, Sergey ; Mumyatov, Alexander V. и др. / High-Performance Organic Field-Effect Transistors Using Rare Earth Metal Oxides as Dielectrics. в: ACS Applied Electronic Materials. 2023 ; Том 5, № 4. стр. 2000-2006.

BibTeX

@article{60f39a5bca17423e99c433196a1b1345,
title = "High-Performance Organic Field-Effect Transistors Using Rare Earth Metal Oxides as Dielectrics",
abstract = "Rare earth metal oxides (REOs) represent promising gate dielectric materials for field-effect transistors due to their high dielectric constants required for suppressing leakage currents in devices. In this paper, we present an approach to deposition of uniform REO gate dielectric coatings by oxidation of thin rare earth metal films in air at relatively low temperatures (100–250 °C). The proposed methodology was extensively explored in organic field-effect transistors (OFETs) using five benchmark organic semiconductors and six REOs as gate dielectrics. It was shown that OFETs with the REO gate dielectrics deliver on average considerably better characteristics compared to the reference devices using electrochemically grown aluminum oxide dielectric (AlOx). OFETs on a flexible plastic substrate were demonstrated, which makes this approach very attractive for developing flexible and wearable electronic devices with improved performance.",
author = "Filipp Talalaev and Sergey Luchkin and Mumyatov, {Alexander V.} and Zhidkov, {Ivan S.} and Lobanov, {Maxim V.} and Emelianov, {Nikita A.} and Babenko, {Sergey D.} and Kurmaev, {Ernst Z.} and Aldoshin, {Sergey M.} and Troshin, {Pavel A.}",
note = "This work was supported at FRC PCP MC RAS by the Ministry of Science and Higher Education of the Russian Federation (Project No. 0089-2019-0010/AAAA-A19-119071190044-3). We acknowledge support of Dr. N. N. Dremova with SEM measurements. The XPS measurements were supported by Ministry of Science and Higher Education of Russia (Theme “Electron” No. AAAA-A18–118020190098-5 and Project FEUZ 2023-0013).",
year = "2023",
month = apr,
day = "25",
doi = "10.1021/acsaelm.2c01334",
language = "English",
volume = "5",
pages = "2000--2006",
journal = "ACS Applied Electronic Materials",
issn = "2637-6113",
publisher = "American Chemical Society",
number = "4",

}

RIS

TY - JOUR

T1 - High-Performance Organic Field-Effect Transistors Using Rare Earth Metal Oxides as Dielectrics

AU - Talalaev, Filipp

AU - Luchkin, Sergey

AU - Mumyatov, Alexander V.

AU - Zhidkov, Ivan S.

AU - Lobanov, Maxim V.

AU - Emelianov, Nikita A.

AU - Babenko, Sergey D.

AU - Kurmaev, Ernst Z.

AU - Aldoshin, Sergey M.

AU - Troshin, Pavel A.

N1 - This work was supported at FRC PCP MC RAS by the Ministry of Science and Higher Education of the Russian Federation (Project No. 0089-2019-0010/AAAA-A19-119071190044-3). We acknowledge support of Dr. N. N. Dremova with SEM measurements. The XPS measurements were supported by Ministry of Science and Higher Education of Russia (Theme “Electron” No. AAAA-A18–118020190098-5 and Project FEUZ 2023-0013).

PY - 2023/4/25

Y1 - 2023/4/25

N2 - Rare earth metal oxides (REOs) represent promising gate dielectric materials for field-effect transistors due to their high dielectric constants required for suppressing leakage currents in devices. In this paper, we present an approach to deposition of uniform REO gate dielectric coatings by oxidation of thin rare earth metal films in air at relatively low temperatures (100–250 °C). The proposed methodology was extensively explored in organic field-effect transistors (OFETs) using five benchmark organic semiconductors and six REOs as gate dielectrics. It was shown that OFETs with the REO gate dielectrics deliver on average considerably better characteristics compared to the reference devices using electrochemically grown aluminum oxide dielectric (AlOx). OFETs on a flexible plastic substrate were demonstrated, which makes this approach very attractive for developing flexible and wearable electronic devices with improved performance.

AB - Rare earth metal oxides (REOs) represent promising gate dielectric materials for field-effect transistors due to their high dielectric constants required for suppressing leakage currents in devices. In this paper, we present an approach to deposition of uniform REO gate dielectric coatings by oxidation of thin rare earth metal films in air at relatively low temperatures (100–250 °C). The proposed methodology was extensively explored in organic field-effect transistors (OFETs) using five benchmark organic semiconductors and six REOs as gate dielectrics. It was shown that OFETs with the REO gate dielectrics deliver on average considerably better characteristics compared to the reference devices using electrochemically grown aluminum oxide dielectric (AlOx). OFETs on a flexible plastic substrate were demonstrated, which makes this approach very attractive for developing flexible and wearable electronic devices with improved performance.

UR - https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=tsmetrics&SrcApp=tsm_test&DestApp=WOS_CPL&DestLinkType=FullRecord&KeyUT=000962921000001

UR - http://www.scopus.com/inward/record.url?partnerID=8YFLogxK&scp=85151555742

U2 - 10.1021/acsaelm.2c01334

DO - 10.1021/acsaelm.2c01334

M3 - Article

VL - 5

SP - 2000

EP - 2006

JO - ACS Applied Electronic Materials

JF - ACS Applied Electronic Materials

SN - 2637-6113

IS - 4

ER -

ID: 38537751