Standard

Effective Mass and g-Factor of Two-Dimentional HgTe Γ8-Band Electrons: Shubnikov-de Haas Oscillations. / Neverov, V. N.; Bogolubskii, A. S.; Gudina, S. V. и др.
в: Semiconductors, Том 54, № 8, 01.08.2020, стр. 982-990.

Результаты исследований: Вклад в журнал › Статья › Рецензирование

Harvard

Neverov, VN, Bogolubskii, AS, Gudina, SV, Podgornykh, SM, Turutkin, KV, Popov, MR, Shelushinina, NG, Yakunin, MV, Mikhailov, NN & Dvoretsky, SA 2020, 'Effective Mass and g-Factor of Two-Dimentional HgTe Γ8-Band Electrons: Shubnikov-de Haas Oscillations', Semiconductors, Том. 54, № 8, стр. 982-990. https://doi.org/10.1134/S1063782620080163

APA

Neverov, V. N., Bogolubskii, A. S., Gudina, S. V., Podgornykh, S. M., Turutkin, K. V., Popov, M. R., Shelushinina, N. G., Yakunin, M. V., Mikhailov, N. N., & Dvoretsky, S. A. (2020). Effective Mass and g-Factor of Two-Dimentional HgTe Γ8-Band Electrons: Shubnikov-de Haas Oscillations. Semiconductors, 54(8), 982-990. https://doi.org/10.1134/S1063782620080163

Vancouver

Neverov VN, Bogolubskii AS, Gudina SV, Podgornykh SM, Turutkin KV, Popov MR и др. Effective Mass and g-Factor of Two-Dimentional HgTe Γ8-Band Electrons: Shubnikov-de Haas Oscillations. Semiconductors. 2020 авг. 1;54(8):982-990. doi: 10.1134/S1063782620080163

Author

Neverov, V. N. ; Bogolubskii, A. S. ; Gudina, S. V. и др. / Effective Mass and g-Factor of Two-Dimentional HgTe Γ8-Band Electrons: Shubnikov-de Haas Oscillations. в: Semiconductors. 2020 ; Том 54, № 8. стр. 982-990.

BibTeX

@article{729dee8106234ee0b255cb0cc90afe52,
title = "Effective Mass and g-Factor of Two-Dimentional HgTe Γ8-Band Electrons: Shubnikov-de Haas Oscillations",
keywords = "effective mass of charge carriers, mercury telluride, quantum Hall effect, quantum wells, Shubnikov–de Haas oscillations, SYSTEM, Shubnikov-de Haas oscillations, INSULATOR, WELL, CONDUCTIVITY, GAS, MAGNETIC-FIELD, QUANTUM HALL REGIME",
author = "Neverov, {V. N.} and Bogolubskii, {A. S.} and Gudina, {S. V.} and Podgornykh, {S. M.} and Turutkin, {K. V.} and Popov, {M. R.} and Shelushinina, {N. G.} and Yakunin, {M. V.} and Mikhailov, {N. N.} and Dvoretsky, {S. A.}",
year = "2020",
month = aug,
day = "1",
doi = "10.1134/S1063782620080163",
language = "English",
volume = "54",
pages = "982--990",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "American Institute of Physics Publising LLC",
number = "8",

}

RIS

TY - JOUR

T1 - Effective Mass and g-Factor of Two-Dimentional HgTe Γ8-Band Electrons: Shubnikov-de Haas Oscillations

AU - Neverov, V. N.

AU - Bogolubskii, A. S.

AU - Gudina, S. V.

AU - Podgornykh, S. M.

AU - Turutkin, K. V.

AU - Popov, M. R.

AU - Shelushinina, N. G.

AU - Yakunin, M. V.

AU - Mikhailov, N. N.

AU - Dvoretsky, S. A.

PY - 2020/8/1

Y1 - 2020/8/1

KW - effective mass of charge carriers

KW - mercury telluride

KW - quantum Hall effect

KW - quantum wells

KW - Shubnikov–de Haas oscillations

KW - SYSTEM

KW - Shubnikov-de Haas oscillations

KW - INSULATOR

KW - WELL

KW - CONDUCTIVITY

KW - GAS

KW - MAGNETIC-FIELD

KW - QUANTUM HALL REGIME

UR - http://www.scopus.com/inward/record.url?scp=85089034486&partnerID=8YFLogxK

UR - https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=tsmetrics&SrcApp=tsm_test&DestApp=WOS_CPL&DestLinkType=FullRecord&KeyUT=000556253900027

UR - https://www.elibrary.ru/item.asp?id=45421587

U2 - 10.1134/S1063782620080163

DO - 10.1134/S1063782620080163

M3 - Article

AN - SCOPUS:85089034486

VL - 54

SP - 982

EP - 990

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 8

ER -

ID: 13678274