Composition, Structure, and Semiconductor Properties of Chemically Deposited SnSe Films

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Composition, Structure, and Semiconductor Properties of Chemically Deposited SnSe Films. / Maskaeva, L. N.; Fedorova, E. A.; Markov, V. F. и др.
в: Semiconductors, Том 53, № 6, 01.06.2019, стр. 853-859.

Результаты исследований: Вклад в журнал › Статья › Рецензирование

BibTeX

@article{b25cccac6b8e4d439d1c7de099fe05c8,

title = "Composition, Structure, and Semiconductor Properties of Chemically Deposited SnSe Films",

keywords = "SNO2 THIN-FILMS, ELECTRICAL-PROPERTIES, TEMPERATURE GROWTH, VAPOR-DEPOSITION, SPRAY-PYROLYSIS, SURFACE, MECHANISM, SELENIDE",

author = "Maskaeva, {L. N.} and Fedorova, {E. A.} and Markov, {V. F.} and Kuznetsov, {M. V.} and Lipina, {O. A.}",

year = "2019",

month = jun,

day = "1",

doi = "10.1134/S1063782619060113",

language = "English",

volume = "53",

pages = "853--859",

journal = "Semiconductors",

issn = "1063-7826",

publisher = "American Institute of Physics Publising LLC",

number = "6",

}

RIS

TY - JOUR

T1 - Composition, Structure, and Semiconductor Properties of Chemically Deposited SnSe Films

AU - Maskaeva, L. N.

AU - Fedorova, E. A.

AU - Markov, V. F.

AU - Kuznetsov, M. V.

AU - Lipina, O. A.

PY - 2019/6/1

Y1 - 2019/6/1

KW - SNO2 THIN-FILMS

KW - ELECTRICAL-PROPERTIES

KW - TEMPERATURE GROWTH

KW - VAPOR-DEPOSITION

KW - SPRAY-PYROLYSIS

KW - SURFACE

KW - MECHANISM

KW - SELENIDE

UR - http://www.scopus.com/inward/record.url?scp=85067185917&partnerID=8YFLogxK

UR - https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=tsmetrics&SrcApp=tsm_test&DestApp=WOS_CPL&DestLinkType=FullRecord&KeyUT=000471063300028

UR - https://www.elibrary.ru/item.asp?id=41633869

U2 - 10.1134/S1063782619060113

DO - 10.1134/S1063782619060113

M3 - Article

AN - SCOPUS:85067185917

VL - 53

SP - 853

EP - 859

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 6

ER -

ID: 10027758