Результаты исследований: Вклад в журнал › Статья › Рецензирование
Результаты исследований: Вклад в журнал › Статья › Рецензирование
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TY - JOUR
T1 - Boosting the piezoelectric property of relaxor ferroelectric single crystal via active manipulation of defect dipole polarization
AU - Hu, Qingyuan
AU - Liao, Huimin
AU - Liu, Xin
AU - Jin, Li
AU - Song, Kexin
AU - Zhuang, Yongyong
AU - Xu, Zhuo
AU - Shur, Vladimir Ya
AU - Wei, Xiaoyong
N1 - This work is supported by the National Nature Science Foundation of China (Grant Nos. 52102143, 51772239, 62001369 and 51761145024), Shaanxi province project (2017ktpt-21 and 2018TD-024 ), Jiangxi Technological Innovation Guidance Science and Technology Plan (Grant No. S20212BDH80017).
PY - 2023/1/1
Y1 - 2023/1/1
N2 - To further enhance the property of piezoelectric materials is of great significance to improve the overall performance of electro-mechanical devices. Here in this work, we propose a thermal annealing and high temperature poling approach to achieve significantly enhanced piezoelectricity in Pb(In1/2Nb1/2)O3[sbnd]Pb(Mg1/3Nb2/3)O3[sbnd]PbTiO3 (PIN-PMN-PT) crystals with a morphotropic phase boundary (MPB) composition. The main idea of our approach is to realize a more sufficiently polarized crystal via active manipulation of defects and orientation of defect polarization. Manipulation of defect dipoles by the high temperature poling is proved by the piezo-response force microscopy. Finally, a d33 of 3 300 pC/N and a SE of 0.25% are obtained, nearly 60% higher than that of conventionally poled crystals. Moreover, such a boosting of piezoelectric property is obtained under a maintained Curie temperature. Our research not only reveals the active control of defect dipole via modified poling method in the PIN-PMN-PT crystal, but also provides a feasible strategy to further improve the property of piezoelectric materials.
AB - To further enhance the property of piezoelectric materials is of great significance to improve the overall performance of electro-mechanical devices. Here in this work, we propose a thermal annealing and high temperature poling approach to achieve significantly enhanced piezoelectricity in Pb(In1/2Nb1/2)O3[sbnd]Pb(Mg1/3Nb2/3)O3[sbnd]PbTiO3 (PIN-PMN-PT) crystals with a morphotropic phase boundary (MPB) composition. The main idea of our approach is to realize a more sufficiently polarized crystal via active manipulation of defects and orientation of defect polarization. Manipulation of defect dipoles by the high temperature poling is proved by the piezo-response force microscopy. Finally, a d33 of 3 300 pC/N and a SE of 0.25% are obtained, nearly 60% higher than that of conventionally poled crystals. Moreover, such a boosting of piezoelectric property is obtained under a maintained Curie temperature. Our research not only reveals the active control of defect dipole via modified poling method in the PIN-PMN-PT crystal, but also provides a feasible strategy to further improve the property of piezoelectric materials.
UR - http://www.scopus.com/inward/record.url?partnerID=8YFLogxK&scp=85139287167
UR - https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=tsmetrics&SrcApp=tsm_test&DestApp=WOS_CPL&DestLinkType=FullRecord&KeyUT=000992469900001
U2 - 10.1016/j.jmat.2022.08.004
DO - 10.1016/j.jmat.2022.08.004
M3 - Article
VL - 9
SP - 166
EP - 173
JO - Journal of Materiomics
JF - Journal of Materiomics
SN - 2352-8478
IS - 1
ER -
ID: 33988159