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Boosting the piezoelectric property of relaxor ferroelectric single crystal via active manipulation of defect dipole polarization. / Hu, Qingyuan; Liao, Huimin; Liu, Xin и др.
в: Journal of Materiomics, Том 9, № 1, 01.01.2023, стр. 166-173.

Результаты исследований: Вклад в журналСтатьяРецензирование

Harvard

Hu, Q, Liao, H, Liu, X, Jin, L, Song, K, Zhuang, Y, Xu, Z, Shur, VY & Wei, X 2023, 'Boosting the piezoelectric property of relaxor ferroelectric single crystal via active manipulation of defect dipole polarization', Journal of Materiomics, Том. 9, № 1, стр. 166-173. https://doi.org/10.1016/j.jmat.2022.08.004

APA

Vancouver

Hu Q, Liao H, Liu X, Jin L, Song K, Zhuang Y и др. Boosting the piezoelectric property of relaxor ferroelectric single crystal via active manipulation of defect dipole polarization. Journal of Materiomics. 2023 янв. 1;9(1):166-173. doi: 10.1016/j.jmat.2022.08.004

Author

Hu, Qingyuan ; Liao, Huimin ; Liu, Xin и др. / Boosting the piezoelectric property of relaxor ferroelectric single crystal via active manipulation of defect dipole polarization. в: Journal of Materiomics. 2023 ; Том 9, № 1. стр. 166-173.

BibTeX

@article{c8cd2a6e6eb74d92bb0ff20481eebaca,
title = "Boosting the piezoelectric property of relaxor ferroelectric single crystal via active manipulation of defect dipole polarization",
abstract = "To further enhance the property of piezoelectric materials is of great significance to improve the overall performance of electro-mechanical devices. Here in this work, we propose a thermal annealing and high temperature poling approach to achieve significantly enhanced piezoelectricity in Pb(In1/2Nb1/2)O3[sbnd]Pb(Mg1/3Nb2/3)O3[sbnd]PbTiO3 (PIN-PMN-PT) crystals with a morphotropic phase boundary (MPB) composition. The main idea of our approach is to realize a more sufficiently polarized crystal via active manipulation of defects and orientation of defect polarization. Manipulation of defect dipoles by the high temperature poling is proved by the piezo-response force microscopy. Finally, a d33 of 3 300 pC/N and a SE of 0.25% are obtained, nearly 60% higher than that of conventionally poled crystals. Moreover, such a boosting of piezoelectric property is obtained under a maintained Curie temperature. Our research not only reveals the active control of defect dipole via modified poling method in the PIN-PMN-PT crystal, but also provides a feasible strategy to further improve the property of piezoelectric materials. ",
author = "Qingyuan Hu and Huimin Liao and Xin Liu and Li Jin and Kexin Song and Yongyong Zhuang and Zhuo Xu and Shur, {Vladimir Ya} and Xiaoyong Wei",
note = "This work is supported by the National Nature Science Foundation of China (Grant Nos. 52102143, 51772239, 62001369 and 51761145024), Shaanxi province project (2017ktpt-21 and 2018TD-024 ), Jiangxi Technological Innovation Guidance Science and Technology Plan (Grant No. S20212BDH80017).",
year = "2023",
month = jan,
day = "1",
doi = "10.1016/j.jmat.2022.08.004",
language = "English",
volume = "9",
pages = "166--173",
journal = "Journal of Materiomics",
issn = "2352-8478",
publisher = "Chinese Ceramic Society",
number = "1",

}

RIS

TY - JOUR

T1 - Boosting the piezoelectric property of relaxor ferroelectric single crystal via active manipulation of defect dipole polarization

AU - Hu, Qingyuan

AU - Liao, Huimin

AU - Liu, Xin

AU - Jin, Li

AU - Song, Kexin

AU - Zhuang, Yongyong

AU - Xu, Zhuo

AU - Shur, Vladimir Ya

AU - Wei, Xiaoyong

N1 - This work is supported by the National Nature Science Foundation of China (Grant Nos. 52102143, 51772239, 62001369 and 51761145024), Shaanxi province project (2017ktpt-21 and 2018TD-024 ), Jiangxi Technological Innovation Guidance Science and Technology Plan (Grant No. S20212BDH80017).

PY - 2023/1/1

Y1 - 2023/1/1

N2 - To further enhance the property of piezoelectric materials is of great significance to improve the overall performance of electro-mechanical devices. Here in this work, we propose a thermal annealing and high temperature poling approach to achieve significantly enhanced piezoelectricity in Pb(In1/2Nb1/2)O3[sbnd]Pb(Mg1/3Nb2/3)O3[sbnd]PbTiO3 (PIN-PMN-PT) crystals with a morphotropic phase boundary (MPB) composition. The main idea of our approach is to realize a more sufficiently polarized crystal via active manipulation of defects and orientation of defect polarization. Manipulation of defect dipoles by the high temperature poling is proved by the piezo-response force microscopy. Finally, a d33 of 3 300 pC/N and a SE of 0.25% are obtained, nearly 60% higher than that of conventionally poled crystals. Moreover, such a boosting of piezoelectric property is obtained under a maintained Curie temperature. Our research not only reveals the active control of defect dipole via modified poling method in the PIN-PMN-PT crystal, but also provides a feasible strategy to further improve the property of piezoelectric materials.

AB - To further enhance the property of piezoelectric materials is of great significance to improve the overall performance of electro-mechanical devices. Here in this work, we propose a thermal annealing and high temperature poling approach to achieve significantly enhanced piezoelectricity in Pb(In1/2Nb1/2)O3[sbnd]Pb(Mg1/3Nb2/3)O3[sbnd]PbTiO3 (PIN-PMN-PT) crystals with a morphotropic phase boundary (MPB) composition. The main idea of our approach is to realize a more sufficiently polarized crystal via active manipulation of defects and orientation of defect polarization. Manipulation of defect dipoles by the high temperature poling is proved by the piezo-response force microscopy. Finally, a d33 of 3 300 pC/N and a SE of 0.25% are obtained, nearly 60% higher than that of conventionally poled crystals. Moreover, such a boosting of piezoelectric property is obtained under a maintained Curie temperature. Our research not only reveals the active control of defect dipole via modified poling method in the PIN-PMN-PT crystal, but also provides a feasible strategy to further improve the property of piezoelectric materials.

UR - http://www.scopus.com/inward/record.url?partnerID=8YFLogxK&scp=85139287167

UR - https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=tsmetrics&SrcApp=tsm_test&DestApp=WOS_CPL&DestLinkType=FullRecord&KeyUT=000992469900001

U2 - 10.1016/j.jmat.2022.08.004

DO - 10.1016/j.jmat.2022.08.004

M3 - Article

VL - 9

SP - 166

EP - 173

JO - Journal of Materiomics

JF - Journal of Materiomics

SN - 2352-8478

IS - 1

ER -

ID: 33988159