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An ab initio study of the interaction of graphene and silicene with one-, two-, and three-layer planar silicon carbide. / Galashev, Alexander Y.; Vorob'ev, Alexey S.
в: Physica E: Low-Dimensional Systems and Nanostructures, Том 138, 115120, 04.2022.

Результаты исследований: Вклад в журнал › Статья › Рецензирование

Harvard

Galashev, AY & Vorob'ev, AS 2022, 'An ab initio study of the interaction of graphene and silicene with one-, two-, and three-layer planar silicon carbide', Physica E: Low-Dimensional Systems and Nanostructures, Том. 138, 115120. https://doi.org/10.1016/j.physe.2021.115120

APA

Galashev, A. Y., & Vorob'ev, A. S. (2022). An ab initio study of the interaction of graphene and silicene with one-, two-, and three-layer planar silicon carbide. Physica E: Low-Dimensional Systems and Nanostructures, 138, [115120]. https://doi.org/10.1016/j.physe.2021.115120

Vancouver

Galashev AY, Vorob'ev AS. An ab initio study of the interaction of graphene and silicene with one-, two-, and three-layer planar silicon carbide. Physica E: Low-Dimensional Systems and Nanostructures. 2022 апр.;138:115120. doi: 10.1016/j.physe.2021.115120

Author

Galashev, Alexander Y. ; Vorob'ev, Alexey S. / An ab initio study of the interaction of graphene and silicene with one-, two-, and three-layer planar silicon carbide. в: Physica E: Low-Dimensional Systems and Nanostructures. 2022 ; Том 138.

BibTeX

@article{475575abbeeb4aa5a89122a3573c0f51,
title = "An ab initio study of the interaction of graphene and silicene with one-, two-, and three-layer planar silicon carbide",
keywords = "Band gap, Geometrical structure, Graphene, Silicene, Silicon carbide, TRANSISTOR, ORDER, CARBON, FIELD",
author = "Galashev, {Alexander Y.} and Vorob'ev, {Alexey S.}",
note = "Publisher Copyright: {\textcopyright} 2021 Elsevier B.V.",
year = "2022",
month = apr,
doi = "10.1016/j.physe.2021.115120",
language = "English",
volume = "138",
journal = "Physica E: Low-Dimensional Systems and Nanostructures",
issn = "1386-9477",
publisher = "Elsevier BV",

}

RIS

TY - JOUR

T1 - An ab initio study of the interaction of graphene and silicene with one-, two-, and three-layer planar silicon carbide

AU - Galashev, Alexander Y.

AU - Vorob'ev, Alexey S.

N1 - Publisher Copyright: © 2021 Elsevier B.V.

PY - 2022/4

Y1 - 2022/4

KW - Band gap

KW - Geometrical structure

KW - Graphene

KW - Silicene

KW - Silicon carbide

KW - TRANSISTOR

KW - ORDER

KW - CARBON

KW - FIELD

UR - http://www.scopus.com/inward/record.url?scp=85121255516&partnerID=8YFLogxK

UR - https://elibrary.ru/item.asp?id=47545366

UR - https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=tsmetrics&SrcApp=tsm_test&DestApp=WOS_CPL&DestLinkType=FullRecord&KeyUT=000777244100005

U2 - 10.1016/j.physe.2021.115120

DO - 10.1016/j.physe.2021.115120

M3 - Article

AN - SCOPUS:85121255516

VL - 138

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

SN - 1386-9477

M1 - 115120

ER -

ID: 29138681