Two-Layer Silicene on the SiC Substrate: Lithiation Investigation in the Molecular Dynamics Experiment

Standard

Two-Layer Silicene on the SiC Substrate: Lithiation Investigation in the Molecular Dynamics Experiment. / Galashev, Alexander Y.; Rakhmanova, Oksana R.
In: ChemPhysChem, Vol. 23, No. 18, e202200250, 16.09.2022.

Research output: Contribution to journal › Article › peer-review

BibTeX

@article{2dcfd55628154159aabc8b931d890734,

title = "Two-Layer Silicene on the SiC Substrate: Lithiation Investigation in the Molecular Dynamics Experiment",

keywords = "diffusion coefficient, lithiation, silicon carbide substrate, system total energy, two-layer silicene",

author = "Galashev, {Alexander Y.} and Rakhmanova, {Oksana R.}",

note = "Publisher Copyright: {\textcopyright} 2022 Wiley-VCH GmbH.",

year = "2022",

month = sep,

day = "16",

doi = "10.1002/cphc.202200250",

language = "English",

volume = "23",

journal = "ChemPhysChem",

issn = "1439-4235",

publisher = "Wiley-Blackwell",

number = "18",

}

RIS

TY - JOUR

T1 - Two-Layer Silicene on the SiC Substrate: Lithiation Investigation in the Molecular Dynamics Experiment

AU - Galashev, Alexander Y.

AU - Rakhmanova, Oksana R.

PY - 2022/9/16

Y1 - 2022/9/16

KW - diffusion coefficient

KW - lithiation

KW - silicon carbide substrate

KW - system total energy

KW - two-layer silicene

UR - http://www.scopus.com/inward/record.url?scp=85133531816&partnerID=8YFLogxK

UR - https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=tsmetrics&SrcApp=tsm_test&DestApp=WOS_CPL&DestLinkType=FullRecord&KeyUT=000821531300001

U2 - 10.1002/cphc.202200250

DO - 10.1002/cphc.202200250

M3 - Article

C2 - 35712866

AN - SCOPUS:85133531816

VL - 23

JO - ChemPhysChem

JF - ChemPhysChem

SN - 1439-4235

IS - 18

M1 - e202200250

ER -

ID: 30949945