Research output: Contribution to journal › Article › peer-review
Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Static and dynamic disorder in ion-implanted silica glass
AU - Kuznetsova, Yu.
AU - Kiryakov, A.
N1 - The research funding from the Ministry of Science and Higher Education of the Russian Federation (Ural Federal University Program of Development within the Priority-2030 Program) is gratefully acknowledged.
PY - 2024/5/1
Y1 - 2024/5/1
N2 - Structural disorder in solid-state materials has a direct impact on the complex of its physicochemical properties and functional characteristics of developed devices. The purpose of this work is to establish the influence of ion irradiation of SiO2 glass on static and dynamic disorder separately. Silica glasses implanted with carbon ions were studied using optical absorption spectroscopy and Raman spectroscopy. The temperature behavior of the fundamental absorption edge was considered in terms of the Urbach rule. The dose dependences of the root-mean-square atomic displacements caused by static and dynamic disorder were obtained. Analysis of Raman spectra confirmed the optical spectroscopy data and revealed a decrease in the medium-range order size along with topological changes in the SiO2 structure after ion implantation. The described step-by-step technique for quantitatively assessing the degree of static and dynamic disorder is universal and can be used to analyze other materials.
AB - Structural disorder in solid-state materials has a direct impact on the complex of its physicochemical properties and functional characteristics of developed devices. The purpose of this work is to establish the influence of ion irradiation of SiO2 glass on static and dynamic disorder separately. Silica glasses implanted with carbon ions were studied using optical absorption spectroscopy and Raman spectroscopy. The temperature behavior of the fundamental absorption edge was considered in terms of the Urbach rule. The dose dependences of the root-mean-square atomic displacements caused by static and dynamic disorder were obtained. Analysis of Raman spectra confirmed the optical spectroscopy data and revealed a decrease in the medium-range order size along with topological changes in the SiO2 structure after ion implantation. The described step-by-step technique for quantitatively assessing the degree of static and dynamic disorder is universal and can be used to analyze other materials.
UR - http://www.scopus.com/inward/record.url?partnerID=8YFLogxK&scp=85188076744
UR - https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=tsmetrics&SrcApp=tsm_test&DestApp=WOS_CPL&DestLinkType=FullRecord&KeyUT=001221131800001
U2 - 10.1016/j.jnoncrysol.2024.122936
DO - 10.1016/j.jnoncrysol.2024.122936
M3 - Article
VL - 631
JO - Journal of Non-Crystalline Solids
JF - Journal of Non-Crystalline Solids
SN - 0022-3093
M1 - 122936
ER -
ID: 55302018