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Static and dynamic disorder in ion-implanted silica glass. / Kuznetsova, Yu.; Kiryakov, A.
In: Journal of Non-Crystalline Solids, Vol. 631, 122936, 01.05.2024.

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Kuznetsova Y, Kiryakov A. Static and dynamic disorder in ion-implanted silica glass. Journal of Non-Crystalline Solids. 2024 May 1;631:122936. doi: 10.1016/j.jnoncrysol.2024.122936

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Kuznetsova, Yu. ; Kiryakov, A. / Static and dynamic disorder in ion-implanted silica glass. In: Journal of Non-Crystalline Solids. 2024 ; Vol. 631.

BibTeX

@article{49ee992532084c709e366ff4b800b931,
title = "Static and dynamic disorder in ion-implanted silica glass",
abstract = "Structural disorder in solid-state materials has a direct impact on the complex of its physicochemical properties and functional characteristics of developed devices. The purpose of this work is to establish the influence of ion irradiation of SiO2 glass on static and dynamic disorder separately. Silica glasses implanted with carbon ions were studied using optical absorption spectroscopy and Raman spectroscopy. The temperature behavior of the fundamental absorption edge was considered in terms of the Urbach rule. The dose dependences of the root-mean-square atomic displacements caused by static and dynamic disorder were obtained. Analysis of Raman spectra confirmed the optical spectroscopy data and revealed a decrease in the medium-range order size along with topological changes in the SiO2 structure after ion implantation. The described step-by-step technique for quantitatively assessing the degree of static and dynamic disorder is universal and can be used to analyze other materials.",
author = "Yu. Kuznetsova and A. Kiryakov",
note = "The research funding from the Ministry of Science and Higher Education of the Russian Federation (Ural Federal University Program of Development within the Priority-2030 Program) is gratefully acknowledged.",
year = "2024",
month = may,
day = "1",
doi = "10.1016/j.jnoncrysol.2024.122936",
language = "English",
volume = "631",
journal = "Journal of Non-Crystalline Solids",
issn = "0022-3093",
publisher = "Elsevier BV",

}

RIS

TY - JOUR

T1 - Static and dynamic disorder in ion-implanted silica glass

AU - Kuznetsova, Yu.

AU - Kiryakov, A.

N1 - The research funding from the Ministry of Science and Higher Education of the Russian Federation (Ural Federal University Program of Development within the Priority-2030 Program) is gratefully acknowledged.

PY - 2024/5/1

Y1 - 2024/5/1

N2 - Structural disorder in solid-state materials has a direct impact on the complex of its physicochemical properties and functional characteristics of developed devices. The purpose of this work is to establish the influence of ion irradiation of SiO2 glass on static and dynamic disorder separately. Silica glasses implanted with carbon ions were studied using optical absorption spectroscopy and Raman spectroscopy. The temperature behavior of the fundamental absorption edge was considered in terms of the Urbach rule. The dose dependences of the root-mean-square atomic displacements caused by static and dynamic disorder were obtained. Analysis of Raman spectra confirmed the optical spectroscopy data and revealed a decrease in the medium-range order size along with topological changes in the SiO2 structure after ion implantation. The described step-by-step technique for quantitatively assessing the degree of static and dynamic disorder is universal and can be used to analyze other materials.

AB - Structural disorder in solid-state materials has a direct impact on the complex of its physicochemical properties and functional characteristics of developed devices. The purpose of this work is to establish the influence of ion irradiation of SiO2 glass on static and dynamic disorder separately. Silica glasses implanted with carbon ions were studied using optical absorption spectroscopy and Raman spectroscopy. The temperature behavior of the fundamental absorption edge was considered in terms of the Urbach rule. The dose dependences of the root-mean-square atomic displacements caused by static and dynamic disorder were obtained. Analysis of Raman spectra confirmed the optical spectroscopy data and revealed a decrease in the medium-range order size along with topological changes in the SiO2 structure after ion implantation. The described step-by-step technique for quantitatively assessing the degree of static and dynamic disorder is universal and can be used to analyze other materials.

UR - http://www.scopus.com/inward/record.url?partnerID=8YFLogxK&scp=85188076744

UR - https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=tsmetrics&SrcApp=tsm_test&DestApp=WOS_CPL&DestLinkType=FullRecord&KeyUT=001221131800001

U2 - 10.1016/j.jnoncrysol.2024.122936

DO - 10.1016/j.jnoncrysol.2024.122936

M3 - Article

VL - 631

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

SN - 0022-3093

M1 - 122936

ER -

ID: 55302018