Standard

Spin‐polarised tunnelling current in metal–insulator–gapless semiconductor structures in a magnetic field. / Germanenko, A. V.; Kruzhaev, V. V.; Minkov, G. M. et al.
In: Advanced Functional Materials, Vol. 3, No. 1-6, 01.01.1994, p. 127-130.

Research output: Contribution to journal › Article › peer-review

Harvard

Germanenko, AV, Kruzhaev, VV, Minkov, GM, Rumyantsev, EL & Rut, OE 1994, 'Spin‐polarised tunnelling current in metal–insulator–gapless semiconductor structures in a magnetic field', Advanced Functional Materials, vol. 3, no. 1-6, pp. 127-130. https://doi.org/10.1002/amo.860030118

APA

Germanenko, A. V., Kruzhaev, V. V., Minkov, G. M., Rumyantsev, E. L., & Rut, O. E. (1994). Spin‐polarised tunnelling current in metal–insulator–gapless semiconductor structures in a magnetic field. Advanced Functional Materials, 3(1-6), 127-130. https://doi.org/10.1002/amo.860030118

Vancouver

Germanenko AV, Kruzhaev VV, Minkov GM, Rumyantsev EL, Rut OE. Spin‐polarised tunnelling current in metal–insulator–gapless semiconductor structures in a magnetic field. Advanced Functional Materials. 1994 Jan 1;3(1-6):127-130. doi: 10.1002/amo.860030118

Author

Germanenko, A. V. ; Kruzhaev, V. V. ; Minkov, G. M. et al. / Spin‐polarised tunnelling current in metal–insulator–gapless semiconductor structures in a magnetic field. In: Advanced Functional Materials. 1994 ; Vol. 3, No. 1-6. pp. 127-130.

BibTeX

@article{5f9058d2673c43e495a34a4fbe5f2899,
title = "Spin‐polarised tunnelling current in metal–insulator–gapless semiconductor structures in a magnetic field",
abstract = "Experimental investigations of tunnelling conductivity oscillations of metal–insulator–gapless semiconductor structures are performed. For the orientation of the magnetic field H | n (n is normal to the structure plane) a splitting of the oscillation maxima of the tunnelling conductivity due to the spin splitting of the Landau levels is observed. It is revealed that when the magnetic field turns away from this direction the amplitudes of the low‐bias maxima decrease monotonously, and at H ⟂ n oscillations corresponding to tunnelling into one spin state only are observed. A theoretical analysis shows that this is caused by an unusual behaviour of the electron wavefunctions near the surface of gapless semiconductors in an applied magnetic field. ",
keywords = "Gapless semiconductor, Magnetic field, Tunneling",
author = "Germanenko, {A. V.} and Kruzhaev, {V. V.} and Minkov, {G. M.} and Rumyantsev, {E. L.} and Rut, {O. E.}",
year = "1994",
month = jan,
day = "1",
doi = "10.1002/amo.860030118",
language = "English",
volume = "3",
pages = "127--130",
journal = "Advanced Functional Materials",
issn = "1616-301X",
publisher = "Wiley-VCH Verlag",
number = "1-6",

}

RIS

TY - JOUR

T1 - Spin‐polarised tunnelling current in metal–insulator–gapless semiconductor structures in a magnetic field

AU - Germanenko, A. V.

AU - Kruzhaev, V. V.

AU - Minkov, G. M.

AU - Rumyantsev, E. L.

AU - Rut, O. E.

PY - 1994/1/1

Y1 - 1994/1/1

N2 - Experimental investigations of tunnelling conductivity oscillations of metal–insulator–gapless semiconductor structures are performed. For the orientation of the magnetic field H | n (n is normal to the structure plane) a splitting of the oscillation maxima of the tunnelling conductivity due to the spin splitting of the Landau levels is observed. It is revealed that when the magnetic field turns away from this direction the amplitudes of the low‐bias maxima decrease monotonously, and at H ⟂ n oscillations corresponding to tunnelling into one spin state only are observed. A theoretical analysis shows that this is caused by an unusual behaviour of the electron wavefunctions near the surface of gapless semiconductors in an applied magnetic field.

AB - Experimental investigations of tunnelling conductivity oscillations of metal–insulator–gapless semiconductor structures are performed. For the orientation of the magnetic field H | n (n is normal to the structure plane) a splitting of the oscillation maxima of the tunnelling conductivity due to the spin splitting of the Landau levels is observed. It is revealed that when the magnetic field turns away from this direction the amplitudes of the low‐bias maxima decrease monotonously, and at H ⟂ n oscillations corresponding to tunnelling into one spin state only are observed. A theoretical analysis shows that this is caused by an unusual behaviour of the electron wavefunctions near the surface of gapless semiconductors in an applied magnetic field.

KW - Gapless semiconductor

KW - Magnetic field

KW - Tunneling

UR - http://www.scopus.com/inward/record.url?scp=0028336578&partnerID=8YFLogxK

UR - https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=tsmetrics&SrcApp=tsm_test&DestApp=WOS_CPL&DestLinkType=FullRecord&KeyUT=A1994MZ34300017

U2 - 10.1002/amo.860030118

DO - 10.1002/amo.860030118

M3 - Article

AN - SCOPUS:0028336578

VL - 3

SP - 127

EP - 130

JO - Advanced Functional Materials

JF - Advanced Functional Materials

SN - 1616-301X

IS - 1-6

ER -

ID: 7211029