Recombination and spin dynamics of excitons in thin (Ga,Al)(Sb,As)/AlAs quantum wells with an indirect band gap and type-I band alignment › Research Explorer

Recombination and spin dynamics of excitons in thin (Ga,Al)(Sb,As)/AlAs quantum wells with an indirect band gap and type-I band alignment

Research output: Contribution to journal › Article › peer-review

DOI

https://doi.org/10.1103/PhysRevB.102.165423
Final published version

T. S. Shamirzaev
D. R. Yakovlev
A. K. Bakarov
N. E. Kopteva
D. Kudlacik
A. K. Gutakovskii
M. Bayer

Original language	English
Article number	165423
Number of pages	9
Journal	Physical Review B
Volume	102
Issue number	16
DOIs	https://doi.org/10.1103/PhysRevB.102.165423
Publication status	Published - 2020

Research areas

SEMICONDUCTOR HETEROSTRUCTURES, CIRCULAR-POLARIZATION, RELAXATION, INSB/ALAS, STRAIN, HEAVY, DOTS

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

WoS ResearchAreas Categories

Materials Science, Multidisciplinary
Physics, Condensed Matter
Physics, Applied

ID: 20132026