Standard

Rashba splitting of kinetically bound states in gated HgCdTe surface quantum wells. / Radantsev, V. F.; Kruzhaev, V. V.
In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 34, No. 1-2, 01.08.2006, p. 340-343.

Research output: Contribution to journal › Article › peer-review

Harvard

Radantsev, VF & Kruzhaev, VV 2006, 'Rashba splitting of kinetically bound states in gated HgCdTe surface quantum wells', Physica E: Low-Dimensional Systems and Nanostructures, vol. 34, no. 1-2, pp. 340-343. https://doi.org/10.1016/j.physe.2006.03.087

APA

Radantsev, V. F., & Kruzhaev, V. V. (2006). Rashba splitting of kinetically bound states in gated HgCdTe surface quantum wells. Physica E: Low-Dimensional Systems and Nanostructures, 34(1-2), 340-343. https://doi.org/10.1016/j.physe.2006.03.087

Vancouver

Radantsev VF, Kruzhaev VV. Rashba splitting of kinetically bound states in gated HgCdTe surface quantum wells. Physica E: Low-Dimensional Systems and Nanostructures. 2006 Aug 1;34(1-2):340-343. doi: 10.1016/j.physe.2006.03.087

Author

Radantsev, V. F. ; Kruzhaev, V. V. / Rashba splitting of kinetically bound states in gated HgCdTe surface quantum wells. In: Physica E: Low-Dimensional Systems and Nanostructures. 2006 ; Vol. 34, No. 1-2. pp. 340-343.

BibTeX

@article{38a9f9feb61d4815bc919de032f035b4,
title = "Rashba splitting of kinetically bound states in gated HgCdTe surface quantum wells",
keywords = "Landau levels, Magnetocapacitance, MOS structures, Narrow-gap and zero-gap semiconductors, Quantum well, Rashba effect",
author = "Radantsev, {V. F.} and Kruzhaev, {V. V.}",
year = "2006",
month = aug,
day = "1",
doi = "10.1016/j.physe.2006.03.087",
language = "English",
volume = "34",
pages = "340--343",
journal = "Physica E: Low-Dimensional Systems and Nanostructures",
issn = "1386-9477",
publisher = "Elsevier BV",
number = "1-2",

}

RIS

TY - JOUR

T1 - Rashba splitting of kinetically bound states in gated HgCdTe surface quantum wells

AU - Radantsev, V. F.

AU - Kruzhaev, V. V.

PY - 2006/8/1

Y1 - 2006/8/1

KW - Landau levels

KW - Magnetocapacitance

KW - MOS structures

KW - Narrow-gap and zero-gap semiconductors

KW - Quantum well

KW - Rashba effect

UR - http://www.scopus.com/inward/record.url?scp=33746390406&partnerID=8YFLogxK

UR - https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=tsmetrics&SrcApp=tsm_test&DestApp=WOS_CPL&DestLinkType=FullRecord&KeyUT=000239903200085

U2 - 10.1016/j.physe.2006.03.087

DO - 10.1016/j.physe.2006.03.087

M3 - Article

AN - SCOPUS:33746390406

VL - 34

SP - 340

EP - 343

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

SN - 1386-9477

IS - 1-2

ER -

ID: 7210848