TY - JOUR

T1 - Rashba splitting in MIS structures based on narrow gap semiconductors: Positive and negative gap

AU - Radantsev, V. F.

PY - 2003/1/1

Y1 - 2003/1/1

N2 - The measured and calculated "Rashba polarizations" Deltan/n similar or equal to (0.1 divided by 0.5) in metal-insulator semiconductor (MIS) structures based on semiconductors with small Kane gap \E-g\ (HgCdTe, HgTe, HgMnTe) exceed the ones in the other systems. If we neglect the Rashba splitting, the subband parameters calculated in 8 x 8, 6 x 6, and 2 x 2 Kane models are practically the same, and they are the same for materials with different sign and value of E-g in agreement with experimental data for low-doped samples. In contrast, the Rashba splitting is critically sensitive to taking into account both heavy-hole and spin-off bands. Calculated and measured values of Deltan/n are higher in materials with E-g < 0. The Rashba splitting is essentially nonlinear in the wave vector. This restricts the applicability of the alpha parameter as the measure of the magnitude of the Rashba effect. The linear-in-k approximations can underestimate alpha up to several times. The theory underestimates the Rashba splitting by 20-40%. Allowing for electron-electron interaction reduces but does not eliminate the discrepancies. In narrow- and zero-gap semiconductors, the two-dimensional spectrum, including the Rashba splitting and resonant shift, can be adequately described by the simplest treatment based on a WKB approach.

AB - The measured and calculated "Rashba polarizations" Deltan/n similar or equal to (0.1 divided by 0.5) in metal-insulator semiconductor (MIS) structures based on semiconductors with small Kane gap \E-g\ (HgCdTe, HgTe, HgMnTe) exceed the ones in the other systems. If we neglect the Rashba splitting, the subband parameters calculated in 8 x 8, 6 x 6, and 2 x 2 Kane models are practically the same, and they are the same for materials with different sign and value of E-g in agreement with experimental data for low-doped samples. In contrast, the Rashba splitting is critically sensitive to taking into account both heavy-hole and spin-off bands. Calculated and measured values of Deltan/n are higher in materials with E-g < 0. The Rashba splitting is essentially nonlinear in the wave vector. This restricts the applicability of the alpha parameter as the measure of the magnitude of the Rashba effect. The linear-in-k approximations can underestimate alpha up to several times. The theory underestimates the Rashba splitting by 20-40%. Allowing for electron-electron interaction reduces but does not eliminate the discrepancies. In narrow- and zero-gap semiconductors, the two-dimensional spectrum, including the Rashba splitting and resonant shift, can be adequately described by the simplest treatment based on a WKB approach.

UR - https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=tsmetrics&SrcApp=tsm_test&DestApp=WOS_CPL&DestLinkType=FullRecord&KeyUT=000184875500006

UR - http://www.scopus.com/inward/record.url?partnerID=8YFLogxK&scp=3543065361

U2 - 10.1023/A:1025349420108

DO - 10.1023/A:1025349420108

M3 - Article

VL - 16

SP - 635

EP - 645

JO - Journal of Superconductivity: Incorporating Novel Magnetism

JF - Journal of Superconductivity: Incorporating Novel Magnetism

SN - 0896-1107

IS - 4

ER -