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Nonohmic conductivity under transition from weak to strong localization in GaAs/InGaAs structures with a two-dimensional electron gas
Research output
:
Contribution to journal
›
Article
›
peer-review
Section of Optoelectronics and Semiconductor Technology
Institute of Natural Sciences and Mathematics
Overview
Cite this
DOI
https://doi.org/10.1134/1.1582539
Final published version
A. A. Sherstobitov
G. M. Minkov
O. É Rut
A. V. Germanenko
B. N. Zvonkov
A. A. Biryukov
E. A. Uskova
Original language
English
Pages (from-to)
705-709
Number of pages
5
Journal
Semiconductors
Volume
37
Issue number
6
DOIs
https://doi.org/10.1134/1.1582539
Publication status
Published -
1 Jun 2003
ASJC Scopus subject areas
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
WoS ResearchAreas Categories
Physics, Condensed Matter
ID: 8533470