Standard

Magnetoresistive memory elements. / Vas'kovskij, V. O.; Mukhametov, V. G.; Savin, P. A. et al.
In: Mikroelektronika, No. 2, 1993, p. 64-71.

Research output: Contribution to journal › Article › peer-review

Harvard

Vas'kovskij, VO, Mukhametov, VG, Savin, PA & Strelok, VV 1993, 'Magnetoresistive memory elements', Mikroelektronika, no. 2, pp. 64-71.

APA

Vas'kovskij, V. O., Mukhametov, V. G., Savin, P. A., & Strelok, V. V. (1993). Magnetoresistive memory elements. Mikroelektronika, (2), 64-71.

Vancouver

Vas'kovskij VO, Mukhametov VG, Savin PA, Strelok VV. Magnetoresistive memory elements. Mikroelektronika. 1993;(2):64-71.

Author

Vas'kovskij, V. O. ; Mukhametov, V. G. ; Savin, P. A. et al. / Magnetoresistive memory elements. In: Mikroelektronika. 1993 ; No. 2. pp. 64-71.

BibTeX

@article{f506e340e9374c47bddf797777cb2063,
title = "Magnetoresistive memory elements",
abstract = "A manufacturing technology is tested, and the relationships are studied, for the magnetization reversal of one-layer and two-layer memory elements, operating on the principles of magnetic recording and magnetoresistive readout of information. The effect of film thickness on the formation of various magnetic states in one-layer acicular elements is determined. It is demonstrated, that the highest readout signal (up to 1 mv) is generated in using states with non- Elej domain boundaries, different in polarity. The relationship between the properties of the initial films, the geometry and hysteresis characteristics of the two- layer elements, whose application allows to simplify the system of information recording-reading control. Conditions are determined for the stable existence and threshold switching of states, differing by the direction of quasi-closed magnetic flux. A readout signal up to 0.15 mv is implemented.",
author = "Vas'kovskij, {V. O.} and Mukhametov, {V. G.} and Savin, {P. A.} and Strelok, {V. V.}",
year = "1993",
language = "Русский",
pages = "64--71",
journal = "Mikroelektronika",
issn = "0544-1269",
publisher = "Издательство {"}Наука{"}",
number = "2",

}

RIS

TY - JOUR

T1 - Magnetoresistive memory elements

AU - Vas'kovskij, V. O.

AU - Mukhametov, V. G.

AU - Savin, P. A.

AU - Strelok, V. V.

PY - 1993

Y1 - 1993

N2 - A manufacturing technology is tested, and the relationships are studied, for the magnetization reversal of one-layer and two-layer memory elements, operating on the principles of magnetic recording and magnetoresistive readout of information. The effect of film thickness on the formation of various magnetic states in one-layer acicular elements is determined. It is demonstrated, that the highest readout signal (up to 1 mv) is generated in using states with non- Elej domain boundaries, different in polarity. The relationship between the properties of the initial films, the geometry and hysteresis characteristics of the two- layer elements, whose application allows to simplify the system of information recording-reading control. Conditions are determined for the stable existence and threshold switching of states, differing by the direction of quasi-closed magnetic flux. A readout signal up to 0.15 mv is implemented.

AB - A manufacturing technology is tested, and the relationships are studied, for the magnetization reversal of one-layer and two-layer memory elements, operating on the principles of magnetic recording and magnetoresistive readout of information. The effect of film thickness on the formation of various magnetic states in one-layer acicular elements is determined. It is demonstrated, that the highest readout signal (up to 1 mv) is generated in using states with non- Elej domain boundaries, different in polarity. The relationship between the properties of the initial films, the geometry and hysteresis characteristics of the two- layer elements, whose application allows to simplify the system of information recording-reading control. Conditions are determined for the stable existence and threshold switching of states, differing by the direction of quasi-closed magnetic flux. A readout signal up to 0.15 mv is implemented.

UR - http://www.scopus.com/inward/record.url?partnerID=8YFLogxK&scp=0027558754

M3 - Статья

SP - 64

EP - 71

JO - Mikroelektronika

JF - Mikroelektronika

SN - 0544-1269

IS - 2

ER -

ID: 55123780