Hole transport and valence-band dispersion law in a HgTe quantum well with a normal energy spectrum

Original language	English
Article number	165311
Number of pages	6
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	89
Issue number	16
DOIs	https://doi.org/10.1103/PhysRevB.89.165311
Publication status	Published - 24 Apr 2014

INTERFACE STATES, NARROW-GAP, HETEROSTRUCTURES, NANOSTRUCTURES, SEMICONDUCTOR, HG1-XCDXTE

ID: 375021