Research output: Contribution to journal › Conference article › peer-review
Research output: Contribution to journal › Conference article › peer-review
}
TY - JOUR
T1 - Hall Effect in “size” topological insulators Bi2Se3
AU - Chistyakov, V. V.
AU - Perevalova, A. N.
AU - Fominykh, В. M.
AU - Huang, Jung-Chun Andrew
AU - Marchenkov, V. V.
N1 - This work was carried out within the state assignment of the Ministry of Education and Science of the Russian Federation (“Spin”, No. 122021000036-3). V.V. Chistyakov, A.N. Perevalova and B.M. Fominykh are grateful to IMP UB RAS for supporting their work on the state task “Spin”, which was carried out within the framework of the youth grant No. m26-22. V.V. Chistyakov and V.V. Marchenkov appreciate the support of the Ural Federal University (Priority-2030 Program).
PY - 2023
Y1 - 2023
N2 - The Hall resistance ρ of thin films of the Bi2Se3 topological insulator with a thickness from 10 nm to 75 nm at a temperature of 4.2 K and in magnetic fields up to 10 T has been measured. The size effect was found, i.e. dependence of the Hall resistance and the Hall coefficient on the thickness of the studied films. Using a single-band model, the values of the current carrier concentration and their mobility are calculated, which also change with a change in the thickness of the samples. © 2023 The Author(s).
AB - The Hall resistance ρ of thin films of the Bi2Se3 topological insulator with a thickness from 10 nm to 75 nm at a temperature of 4.2 K and in magnetic fields up to 10 T has been measured. The size effect was found, i.e. dependence of the Hall resistance and the Hall coefficient on the thickness of the studied films. Using a single-band model, the values of the current carrier concentration and their mobility are calculated, which also change with a change in the thickness of the samples. © 2023 The Author(s).
UR - http://www.scopus.com/inward/record.url?partnerID=8YFLogxK&scp=85180790631
UR - https://www.elibrary.ru/item.asp?id=59463310
UR - https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=tsmetrics&SrcApp=tsm_test&DestApp=WOS_CPL&DestLinkType=FullRecord&KeyUT=001158169300002
U2 - 10.18721/JPM.163.102
DO - 10.18721/JPM.163.102
M3 - Conference article
VL - 16
SP - 16
EP - 20
JO - St. Petersburg State Polytechnical University Journal: Physics and Mathematics
JF - St. Petersburg State Polytechnical University Journal: Physics and Mathematics
SN - 2304-9782
IS - 31
ER -
ID: 50635997