GaAs/GaP Quantum-Well Heterostructures Grown on Si Substrates › Research Explorer

GaAs/GaP Quantum-Well Heterostructures Grown on Si Substrates

Research output: Contribution to journal › Article › peer-review

DOI

https://doi.org/10.1134/S1063782619090021
Final published version

D. S. Abramkin
M. O. Petrushkov
M. A. Putyato
B. R. Semyagin
E. A. Emelyanov
V. V. Preobrazhenskii
A. K. Gutakovskii
T. S. Shamirzaev

Original language	English
Pages (from-to)	1143-1147
Number of pages	5
Journal	Semiconductors
Volume	53
Issue number	9
DOIs	https://doi.org/10.1134/S1063782619090021
Publication status	Published - 1 Sept 2019

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Atomic and Molecular Physics, and Optics

Level of Research Output

VAK List

Research areas

GaP on Si, hybrid substrates, molecular-beam epitaxy, photoluminescence, quantum wells, SEMICONDUCTORS, SILICON, GAP

WoS ResearchAreas Categories

Physics, Condensed Matter

ID: 10772371