Exciton recombination and spin relaxation in strong magnetic fields in ultrathin (In,Al)As/AlAs quantum wells with indirect band gap and type-I band alignment › Research Explorer

Exciton recombination and spin relaxation in strong magnetic fields in ultrathin (In,Al)As/AlAs quantum wells with indirect band gap and type-I band alignment

Research output: Contribution to journal › Article › peer-review

DOI

https://doi.org/10.1103/PhysRevB.104.045305
Final published version

T. S. Shamirzaev
J. Rautert
D. R. Yakovlev
M. Bayer

Original language	English
Article number	045305
Number of pages	11
Journal	Physical Review B
Volume	104
Issue number	4
DOIs	https://doi.org/10.1103/PhysRevB.104.045305
Publication status	Published - 15 Jul 2021

WoS ResearchAreas Categories

Materials Science, Multidisciplinary
Physics, Condensed Matter
Physics, Applied

Research areas

SEMICONDUCTOR HETEROSTRUCTURES, HEAVY, SEGREGATION, INSB/ALAS, DYNAMICS, DOTS

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

ID: 22835307