Standard

Energy structure of Eu3+ centres in CdF2-CaF 2: Eu superlattices on silicon. / Chernyshev, V a; Abrosimov, A v; Gastev, S v et al.
In: Journal of Physics Condensed Matter, Vol. 19, No. 39, 395023, 03.10.2007.

Research output: Contribution to journalArticlepeer-review

Harvard

Chernyshev, VA, Abrosimov, AV, Gastev, SV, Krupin, AV, Nikiforov, AE, Choi, JK, Reeves, RJ, Suturin, SM & Sokolov, NS 2007, 'Energy structure of Eu3+ centres in CdF2-CaF 2: Eu superlattices on silicon', Journal of Physics Condensed Matter, vol. 19, no. 39, 395023. https://doi.org/10.1088/0953-8984/19/39/395023

APA

Chernyshev, V. A., Abrosimov, A. V., Gastev, S. V., Krupin, A. V., Nikiforov, A. E., Choi, J. K., Reeves, R. J., Suturin, S. M., & Sokolov, N. S. (2007). Energy structure of Eu3+ centres in CdF2-CaF 2: Eu superlattices on silicon. Journal of Physics Condensed Matter, 19(39), [395023]. https://doi.org/10.1088/0953-8984/19/39/395023

Vancouver

Chernyshev VA, Abrosimov AV, Gastev SV, Krupin AV, Nikiforov AE, Choi JK et al. Energy structure of Eu3+ centres in CdF2-CaF 2: Eu superlattices on silicon. Journal of Physics Condensed Matter. 2007 Oct 3;19(39):395023. doi: 10.1088/0953-8984/19/39/395023

Author

Chernyshev, V a ; Abrosimov, A v ; Gastev, S v et al. / Energy structure of Eu3+ centres in CdF2-CaF 2: Eu superlattices on silicon. In: Journal of Physics Condensed Matter. 2007 ; Vol. 19, No. 39.

BibTeX

@article{c40011819a514194894c08e8d2f13393,
title = "Energy structure of Eu3+ centres in CdF2-CaF 2: Eu superlattices on silicon",
abstract = "Stark energy levels of Eu3+ (4f6) ions in CdF 2-CaF2:Eu epitaxial superlattices on Si have been measured by laser spectroscopy and calculated in an exchange charge model. Two types of centre have been considered in the CaF2 layer: an 'interface centre', close to the CdF2/CaF2 interface, and a 'remote centre' located in the core of a layer. The influence of distortion, created by the silicon substrate, has been taken into consideration. The calculations confirmed a previously suggested 'electron' model of the interface centre.",
author = "Chernyshev, {V a} and Abrosimov, {A v} and Gastev, {S v} and Krupin, {A v} and Nikiforov, {A e} and Choi, {J k} and Reeves, {R j} and Suturin, {S m} and Sokolov, {N s}",
year = "2007",
month = oct,
day = "3",
doi = "10.1088/0953-8984/19/39/395023",
language = "English",
volume = "19",
journal = "Journal of Physics Condensed Matter",
issn = "0953-8984",
publisher = "Institute of Physics Publishing (IOP)",
number = "39",

}

RIS

TY - JOUR

T1 - Energy structure of Eu3+ centres in CdF2-CaF 2: Eu superlattices on silicon

AU - Chernyshev, V a

AU - Abrosimov, A v

AU - Gastev, S v

AU - Krupin, A v

AU - Nikiforov, A e

AU - Choi, J k

AU - Reeves, R j

AU - Suturin, S m

AU - Sokolov, N s

PY - 2007/10/3

Y1 - 2007/10/3

N2 - Stark energy levels of Eu3+ (4f6) ions in CdF 2-CaF2:Eu epitaxial superlattices on Si have been measured by laser spectroscopy and calculated in an exchange charge model. Two types of centre have been considered in the CaF2 layer: an 'interface centre', close to the CdF2/CaF2 interface, and a 'remote centre' located in the core of a layer. The influence of distortion, created by the silicon substrate, has been taken into consideration. The calculations confirmed a previously suggested 'electron' model of the interface centre.

AB - Stark energy levels of Eu3+ (4f6) ions in CdF 2-CaF2:Eu epitaxial superlattices on Si have been measured by laser spectroscopy and calculated in an exchange charge model. Two types of centre have been considered in the CaF2 layer: an 'interface centre', close to the CdF2/CaF2 interface, and a 'remote centre' located in the core of a layer. The influence of distortion, created by the silicon substrate, has been taken into consideration. The calculations confirmed a previously suggested 'electron' model of the interface centre.

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UR - http://www.scopus.com/inward/record.url?partnerID=8YFLogxK&scp=34548458562

U2 - 10.1088/0953-8984/19/39/395023

DO - 10.1088/0953-8984/19/39/395023

M3 - Article

VL - 19

JO - Journal of Physics Condensed Matter

JF - Journal of Physics Condensed Matter

SN - 0953-8984

IS - 39

M1 - 395023

ER -

ID: 41297169