DIRECT DETERMINATION OF FORBIDDEN-BAND WIDTH OF A HEAVILY DOPED SEMICONDUCTOR.

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DIRECT DETERMINATION OF FORBIDDEN-BAND WIDTH OF A HEAVILY DOPED SEMICONDUCTOR. / Zverev, L. P.; Kruzhaev, V. V.; Negashev, S. A. et al.
In: Semiconductors, Vol. 10, No. 3, 01.01.1976, p. 337-338.

Research output: Contribution to journal › Article › peer-review

BibTeX

@article{ecc0e8da38714ee893974f95703da327,

title = "DIRECT DETERMINATION OF FORBIDDEN-BAND WIDTH OF A HEAVILY DOPED SEMICONDUCTOR.",

author = "Zverev, {L. P.} and Kruzhaev, {V. V.} and Negashev, {S. A.} and Min'kov, {G. M.}",

year = "1976",

month = jan,

day = "1",

language = "English",

volume = "10",

pages = "337--338",

journal = "Semiconductors",

issn = "0038-5700",

publisher = "American Institute of Physics Publising LLC",

number = "3",

}

RIS

TY - JOUR

T1 - DIRECT DETERMINATION OF FORBIDDEN-BAND WIDTH OF A HEAVILY DOPED SEMICONDUCTOR.

AU - Zverev, L. P.

AU - Kruzhaev, V. V.

AU - Negashev, S. A.

AU - Min'kov, G. M.

PY - 1976/1/1

Y1 - 1976/1/1

UR - http://www.scopus.com/inward/record.url?scp=0016938528&partnerID=8YFLogxK

UR - https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=tsmetrics&SrcApp=tsm_test&DestApp=WOS_CPL&DestLinkType=FullRecord&KeyUT=A1976CC51100032

M3 - Article

AN - SCOPUS:0016938528

VL - 10

SP - 337

EP - 338

JO - Semiconductors

JF - Semiconductors

SN - 0038-5700

IS - 3

ER -

ID: 7212082