Standard

Determination of the matrix element of the quasi-momentum operator in the zero-gap semiconductor HgSe by the field-effect method in electrolyte. / Shevchenko, O. Yu.; Radantsev, V.; Yafyasov, A. et al.
In: Semiconductors, Vol. 36, No. 4, 2002, p. 390-393.

Research output: Contribution to journal › Article › peer-review

Harvard

Shevchenko, OY, Radantsev, V, Yafyasov, A, Bozhevol’nov, VB, Ivankiv, I & Perepelkin, AD 2002, 'Determination of the matrix element of the quasi-momentum operator in the zero-gap semiconductor HgSe by the field-effect method in electrolyte', Semiconductors, vol. 36, no. 4, pp. 390-393. https://doi.org/10.1134/1.1469185

APA

Shevchenko, O. Y., Radantsev, V., Yafyasov, A., Bozhevol’nov, V. B., Ivankiv, I., & Perepelkin, A. D. (2002). Determination of the matrix element of the quasi-momentum operator in the zero-gap semiconductor HgSe by the field-effect method in electrolyte. Semiconductors, 36(4), 390-393. https://doi.org/10.1134/1.1469185

Vancouver

Shevchenko OY, Radantsev V, Yafyasov A, Bozhevol’nov VB, Ivankiv I, Perepelkin AD. Determination of the matrix element of the quasi-momentum operator in the zero-gap semiconductor HgSe by the field-effect method in electrolyte. Semiconductors. 2002;36(4):390-393. doi: 10.1134/1.1469185

Author

Shevchenko, O. Yu. ; Radantsev, V. ; Yafyasov, A. et al. / Determination of the matrix element of the quasi-momentum operator in the zero-gap semiconductor HgSe by the field-effect method in electrolyte. In: Semiconductors. 2002 ; Vol. 36, No. 4. pp. 390-393.

BibTeX

@article{a41a709f35bb4390bd84e1c53b384cbb,
title = "Determination of the matrix element of the quasi-momentum operator in the zero-gap semiconductor HgSe by the field-effect method in electrolyte",
abstract = "The field-effect method in electrolyte was used to study the zero-gap semiconductor HgSe-electrolyte (saturated solution of KCl) system by measuring the capacitance-voltage and current-voltage characteristics. A technique for the estimation of the matrix element P of the quasi-momentum operator from capacitance-voltage characteristics was proposed, and the value of P for HgSe was determined at T = 295 K. {\textcopyright} 2002 MAIK {"}Nauka/Interperiodica{"}.",
author = "Shevchenko, {O. Yu.} and V. Radantsev and A. Yafyasov and Bozhevol{\textquoteright}nov, {V. B.} and I. Ivankiv and Perepelkin, {A. D.}",
note = "This study was supported by the Ministry of Education of the Russian Federation, project no. E00-3.4-278, and the Federal Program “Russian Universities—Basic Research”, project no. 99-27-32.",
year = "2002",
doi = "10.1134/1.1469185",
language = "English",
volume = "36",
pages = "390--393",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "American Institute of Physics Publising LLC",
number = "4",

}

RIS

TY - JOUR

T1 - Determination of the matrix element of the quasi-momentum operator in the zero-gap semiconductor HgSe by the field-effect method in electrolyte

AU - Shevchenko, O. Yu.

AU - Radantsev, V.

AU - Yafyasov, A.

AU - Bozhevol’nov, V. B.

AU - Ivankiv, I.

AU - Perepelkin, A. D.

N1 - This study was supported by the Ministry of Education of the Russian Federation, project no. E00-3.4-278, and the Federal Program “Russian Universities—Basic Research”, project no. 99-27-32.

PY - 2002

Y1 - 2002

N2 - The field-effect method in electrolyte was used to study the zero-gap semiconductor HgSe-electrolyte (saturated solution of KCl) system by measuring the capacitance-voltage and current-voltage characteristics. A technique for the estimation of the matrix element P of the quasi-momentum operator from capacitance-voltage characteristics was proposed, and the value of P for HgSe was determined at T = 295 K. © 2002 MAIK "Nauka/Interperiodica".

AB - The field-effect method in electrolyte was used to study the zero-gap semiconductor HgSe-electrolyte (saturated solution of KCl) system by measuring the capacitance-voltage and current-voltage characteristics. A technique for the estimation of the matrix element P of the quasi-momentum operator from capacitance-voltage characteristics was proposed, and the value of P for HgSe was determined at T = 295 K. © 2002 MAIK "Nauka/Interperiodica".

UR - https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=tsmetrics&SrcApp=tsm_test&DestApp=WOS_CPL&DestLinkType=FullRecord&KeyUT=000174766600008

UR - http://www.scopus.com/inward/record.url?partnerID=8YFLogxK&scp=0036555121

U2 - 10.1134/1.1469185

DO - 10.1134/1.1469185

M3 - Article

VL - 36

SP - 390

EP - 393

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 4

ER -

ID: 43818337