Concentration Dependence of Localized Magnetic Moments of Hybridized Electron States at the Impurities of Transition Elements in Semiconductors

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Concentration Dependence of Localized Magnetic Moments of Hybridized Electron States at the Impurities of Transition Elements in Semiconductors. / Okulov, V. I.; Pamyatnykh, E. A.; Zabaznov, Y. V.
In: Solid State Phenomena, Vol. 168-169, 2011, p. 489-492.

Research output: Contribution to journal › Conference article › peer-review

BibTeX

@article{5a27c3fe8b02403dbb01d984596bc24a,

title = "Concentration Dependence of Localized Magnetic Moments of Hybridized Electron States at the Impurities of Transition Elements in Semiconductors",

abstract = "Based on a simple model, theoretical description of localized spins of hybridized electron states of donor impurities in the conduction band of asemiconductor has been developed. Equations are formulated and solved numerically that describe the concentration dependence of localized spins. It is shown that they can exist and reach maximal values in a certain interval of impurity concentration in the vicinity of its value, at which the Fermi energy of the electronic system coincides with the energy level of the donor impurity. The conclusions obtained are compared with the results of Anderson's theory.",

author = "Okulov, {V. I.} and Pamyatnykh, {E. A.} and Zabaznov, {Y. V.}",

note = "This study was supported by the Russian Foundation for Basic Research, grant No 09-02-01389, and Russian-American Program BRHE, grant EK-005-00 (REC-005).",

year = "2011",

doi = "10.4028/www.scientific.net/SSP.168-169.489",

language = "English",

volume = "168-169",

pages = "489--492",

journal = "Solid State Phenomena",

issn = "1662-9779",

publisher = "Scientific.net",

}

RIS

TY - JOUR

T1 - Concentration Dependence of Localized Magnetic Moments of Hybridized Electron States at the Impurities of Transition Elements in Semiconductors

AU - Okulov, V. I.

AU - Pamyatnykh, E. A.

AU - Zabaznov, Y. V.

N1 - This study was supported by the Russian Foundation for Basic Research, grant No 09-02-01389, and Russian-American Program BRHE, grant EK-005-00 (REC-005).

PY - 2011

Y1 - 2011

N2 - Based on a simple model, theoretical description of localized spins of hybridized electron states of donor impurities in the conduction band of asemiconductor has been developed. Equations are formulated and solved numerically that describe the concentration dependence of localized spins. It is shown that they can exist and reach maximal values in a certain interval of impurity concentration in the vicinity of its value, at which the Fermi energy of the electronic system coincides with the energy level of the donor impurity. The conclusions obtained are compared with the results of Anderson's theory.

AB - Based on a simple model, theoretical description of localized spins of hybridized electron states of donor impurities in the conduction band of asemiconductor has been developed. Equations are formulated and solved numerically that describe the concentration dependence of localized spins. It is shown that they can exist and reach maximal values in a certain interval of impurity concentration in the vicinity of its value, at which the Fermi energy of the electronic system coincides with the energy level of the donor impurity. The conclusions obtained are compared with the results of Anderson's theory.

UR - https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=tsmetrics&SrcApp=tsm_test&DestApp=WOS_CPL&DestLinkType=FullRecord&KeyUT=000289533500111

UR - http://www.scopus.com/inward/record.url?partnerID=8YFLogxK&scp=79951875841

U2 - 10.4028/www.scientific.net/SSP.168-169.489

DO - 10.4028/www.scientific.net/SSP.168-169.489

M3 - Conference article

VL - 168-169

SP - 489

EP - 492

JO - Solid State Phenomena

JF - Solid State Phenomena

SN - 1662-9779

ER -

ID: 37967228