TY - JOUR

T1 - Charge carrier transport in PbS films doped with iodine

AU - Maskaeva, L.

AU - Pozdin, A.

AU - Pavlova, A.

AU - Korkh, Yu.

AU - Kuznetsova, T.

AU - Voronin, V.

AU - Krivonosova, K. E.

AU - Charikova, T.

AU - Markov, V.

N1 - Текст о финансировании This work was financially supported by the Ministry of Science and Higher Education of the Russian Federation, State Contract no FEUZ-2023-0021 (H687.42B.325/23). Raman spectra, X-ray diffraction and atomic force microscope measurements were carried out within the state assignment of the Ministry of Science and Higher Education of the Russian Federation on the topic (“Spin” No. 122021000036-3 and “FLUX” No. 122021000031-8). Transport and galvanomagnetic properties were carried out within the framework of the state assignments of the Ministry of Science and Higher Education of the Russian Federation on the topic “Electron” No. 122021000039-4.

PY - 2024

Y1 - 2024

N2 - The results of the measurements of electrical and Hall resistivities on polycrystalline PbS films doped with iodine obtained through hydrochemical deposition are presented. The analysis of the temperature dependence of resistivity points out the crossover from the hopping mechanism due to thermal delocalization in the impurity band to the variable range hopping mechanism. The increase in the iodine content in the films leads to an increase in the impurity ionization energy. It has been established that the temperature dependence of resistivity over a wide temperature range obeys the inverse Arrhenius law, which is characteristic of disordered polycrystalline films with different sizes and orientations of crystallites relative to the substrate, as confirmed by AFM topography, Raman spectra and X-ray diffraction measurements. We found that the type of charge carrier changes from electrons to holes with an increase in the iodine content. Additionally, for a wide range of iodine doping, the concentration of charge carriers is low, indicating the possible occurrence of a self-compensation mechanism due to the formation of impurity defects. © 2024 The Royal Society of Chemistry.

AB - The results of the measurements of electrical and Hall resistivities on polycrystalline PbS films doped with iodine obtained through hydrochemical deposition are presented. The analysis of the temperature dependence of resistivity points out the crossover from the hopping mechanism due to thermal delocalization in the impurity band to the variable range hopping mechanism. The increase in the iodine content in the films leads to an increase in the impurity ionization energy. It has been established that the temperature dependence of resistivity over a wide temperature range obeys the inverse Arrhenius law, which is characteristic of disordered polycrystalline films with different sizes and orientations of crystallites relative to the substrate, as confirmed by AFM topography, Raman spectra and X-ray diffraction measurements. We found that the type of charge carrier changes from electrons to holes with an increase in the iodine content. Additionally, for a wide range of iodine doping, the concentration of charge carriers is low, indicating the possible occurrence of a self-compensation mechanism due to the formation of impurity defects. © 2024 The Royal Society of Chemistry.

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U2 - 10.1039/D3CP06053E

DO - 10.1039/D3CP06053E

M3 - Article

VL - 26

SP - 10641

EP - 10649

JO - Physical Chemistry Chemical Physics

JF - Physical Chemistry Chemical Physics

SN - 1463-9076

IS - 14

ER -